FDMS8018 Todos los transistores

 

FDMS8018 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS8018
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: PQFN5X6
     - Selección de transistores por parámetros

 

FDMS8018 Datasheet (PDF)

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FDMS8018

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:312K  fairchild semi
fdms8018.pdf pdf_icon

FDMS8018

December 2011FDMS8018N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 26 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

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fdms8026s.pdf pdf_icon

FDMS8018

August 2010FDMS8026SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Adv

 8.2. Size:281K  fairchild semi
fdms8025s.pdf pdf_icon

FDMS8018

August 2010FDMS8025SN-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rDS(

Otros transistores... FDD86110 , HUFA76407DK8TF085 , HUFA76409D3ST , HUFA76413DK8TF085 , HUFA76419D3S , HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , CS150N03A8 , MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P .

History: CEK01N6G | P9515BD | HM4612 | H02N60I | KPCF8402 | AP9563GK | OSG80R900FF

 

 
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