Справочник MOSFET. FDMS8018

 

FDMS8018 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMS8018
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: PQFN5X6

 Аналог (замена) для FDMS8018

 

 

FDMS8018 Datasheet (PDF)

 ..1. Size:427K  1
fdms8018.pdf

FDMS8018
FDMS8018

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:312K  fairchild semi
fdms8018.pdf

FDMS8018
FDMS8018

December 2011FDMS8018N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 26 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

 8.1. Size:289K  fairchild semi
fdms8026s.pdf

FDMS8018
FDMS8018

August 2010FDMS8026SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Adv

 8.2. Size:281K  fairchild semi
fdms8025s.pdf

FDMS8018
FDMS8018

August 2010FDMS8025SN-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rDS(

 8.3. Size:286K  fairchild semi
fdms8027s.pdf

FDMS8018
FDMS8018

August 2010FDMS8027SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest Adv

 8.4. Size:331K  fairchild semi
fdms8050.pdf

FDMS8018
FDMS8018

August 2014FDMS8050N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 Aringing of DC/DC converters using either synchronous or Advanced P

 8.5. Size:258K  fairchild semi
fdms8020.pdf

FDMS8018
FDMS8018

November 2011FDMS8020N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P

 8.6. Size:259K  fairchild semi
fdms8023s.pdf

FDMS8018
FDMS8018

August 2010FDMS8023SN-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 mFeatures General DescriptionThe FDMS8023S has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest rDS(

 8.7. Size:316K  fairchild semi
fdms8050et30.pdf

FDMS8018
FDMS8018

January 2015FDMS8050ET30N-Channel PowerTrench MOSFET30 V, 423 A, 0.65 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Extended TJ rating to 175Cimprove the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 Aringing of DC/DC converters using either synchronous or conventional switching PWM

 8.8. Size:338K  fairchild semi
fdms8090.pdf

FDMS8018
FDMS8018

April 2013FDMS8090PowerTrench Symmetrical Dual 100 V N-Channel MOSFETFeatures General DescriptionThis device includes two fast switching (Qgd minimized) 100V Max rDS(on) = 13 m at VGS = 10 V, ID = 10 AN-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) Max rDS(on) = 20 m at VGS = 6 V, ID = 8 Apackage. The package is enhanced for exceptional thermal performance.

 8.9. Size:370K  onsemi
fdms8050.pdf

FDMS8018
FDMS8018

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.10. Size:450K  onsemi
fdms8090.pdf

FDMS8018
FDMS8018

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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