FDMS8018 Spec and Replacement
Type Designator: FDMS8018
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 120
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018
Ohm
Package:
PQFN5X6
FDMS8018 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS8018 Specs
..1. Size:427K 1
fdms8018.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
..2. Size:312K fairchild semi
fdms8018.pdf 
December 2011 FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 26 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa... See More ⇒
8.1. Size:289K fairchild semi
fdms8026s.pdf 
August 2010 FDMS8026S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Adv... See More ⇒
8.2. Size:281K fairchild semi
fdms8025s.pdf 
August 2010 FDMS8025S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rDS(... See More ⇒
8.3. Size:286K fairchild semi
fdms8027s.pdf 
August 2010 FDMS8027S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest Adv... See More ⇒
8.4. Size:331K fairchild semi
fdms8050.pdf 
August 2014 FDMS8050 N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P... See More ⇒
8.5. Size:258K fairchild semi
fdms8020.pdf 
November 2011 FDMS8020 N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P... See More ⇒
8.6. Size:259K fairchild semi
fdms8023s.pdf 
August 2010 FDMS8023S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m Features General Description The FDMS8023S has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rDS(... See More ⇒
8.7. Size:316K fairchild semi
fdms8050et30.pdf 
January 2015 FDMS8050ET30 N-Channel PowerTrench MOSFET 30 V, 423 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175 C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM... See More ⇒
8.8. Size:338K fairchild semi
fdms8090.pdf 
April 2013 FDMS8090 PowerTrench Symmetrical Dual 100 V N-Channel MOSFET Features General Description This device includes two fast switching (Qgd minimized) 100V Max rDS(on) = 13 m at VGS = 10 V, ID = 10 A N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) Max rDS(on) = 20 m at VGS = 6 V, ID = 8 A package. The package is enhanced for exceptional thermal performance. ... See More ⇒
8.9. Size:370K onsemi
fdms8050.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.10. Size:450K onsemi
fdms8090.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDD86110
, HUFA76407DK8TF085
, HUFA76409D3ST
, HUFA76413DK8TF085
, HUFA76419D3S
, HUFA76429D3
, HUFA76429D3STF085
, HUFA76645S3STF085
, IRFB3607
, MTP3055VL
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.
Keywords - FDMS8018 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.