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FDMS8018 Spec and Replacement


   Type Designator: FDMS8018
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: PQFN5X6

 FDMS8018 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS8018 Specs

 ..1. Size:427K  1
fdms8018.pdf pdf_icon

FDMS8018

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..2. Size:312K  fairchild semi
fdms8018.pdf pdf_icon

FDMS8018

December 2011 FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 26 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa... See More ⇒

 8.1. Size:289K  fairchild semi
fdms8026s.pdf pdf_icon

FDMS8018

August 2010 FDMS8026S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Adv... See More ⇒

 8.2. Size:281K  fairchild semi
fdms8025s.pdf pdf_icon

FDMS8018

August 2010 FDMS8025S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rDS(... See More ⇒

Detailed specifications: FDD86110 , HUFA76407DK8TF085 , HUFA76409D3ST , HUFA76413DK8TF085 , HUFA76419D3S , HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , IRFB3607 , MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P .

Keywords - FDMS8018 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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