MTP3055VL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP3055VL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 8.1 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO220
MTP3055VL Datasheet (PDF)
mtp3055vl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp3055vl.pdf

June 2000DISTRIBUTION GROUP*MTP3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 VThis N-Channel Logic Level MOSFET has been designedspecifically for low voltage, high speed switching Critical DC electrical parameters specified at elevatedapplications i.e. power supplies and power mo
mtp3055vlrev2a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp3055vrev2a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS
Otros transistores... HUFA76407DK8TF085 , HUFA76409D3ST , HUFA76413DK8TF085 , HUFA76419D3S , HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , FDMS8018 , P60NF06 , NDC7001C , FDMB2307NZ , NDS331N , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , FDME905PT .
History: SVD2N60M | JFAM20N60C | 2SK3697-01 | SIA810DJ | IPB65R190C6
History: SVD2N60M | JFAM20N60C | 2SK3697-01 | SIA810DJ | IPB65R190C6



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