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MTP3055VL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP3055VL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO220

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MTP3055VL datasheet

 ..1. Size:144K  motorola
mtp3055vl.pdf pdf_icon

MTP3055VL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 ..2. Size:42K  fairchild semi
mtp3055vl.pdf pdf_icon

MTP3055VL

June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching Critical DC electrical parameters specified at elevated applications i.e. power supplies and power mo

 0.1. Size:161K  motorola
mtp3055vlrev2a.pdf pdf_icon

MTP3055VL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 6.1. Size:160K  motorola
mtp3055vrev2a.pdf pdf_icon

MTP3055VL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

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