MTP3055VL Datasheet. Specs and Replacement

Type Designator: MTP3055VL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220

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MTP3055VL datasheet

 ..1. Size:144K  motorola
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MTP3055VL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS ... See More ⇒

 ..2. Size:42K  fairchild semi
mtp3055vl.pdf pdf_icon

MTP3055VL

June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching Critical DC electrical parameters specified at elevated applications i.e. power supplies and power mo... See More ⇒

 0.1. Size:161K  motorola
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MTP3055VL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS ... See More ⇒

 6.1. Size:160K  motorola
mtp3055vrev2a.pdf pdf_icon

MTP3055VL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS... See More ⇒

Detailed specifications: HUFA76407DK8TF085, HUFA76409D3ST, HUFA76413DK8TF085, HUFA76419D3S, HUFA76429D3, HUFA76429D3STF085, HUFA76645S3STF085, FDMS8018, AON6380, NDC7001C, FDMB2307NZ, NDS331N, RFD14N05SM9A, SI3443DV, SI4532DY, FDMA905P, FDME905PT

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