RFD14N05SM9A Todos los transistores

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RFD14N05SM9A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFD14N05SM9A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO252_DPAK

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RFD14N05SM9A Datasheet (PDF)

1.1. rfd14n05sm9a.pdf Size:219K _fairchild_semi

RFD14N05SM9A
RFD14N05SM9A

RFD14N05, RFD14N05SM Data Sheet February 2004 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs • 14A, 50V These are N-channel power MOSFETs manufactured using • rDS(ON) = 0.100Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti

2.1. rfd14n05l rfd14n05lsm rfp14n05l.pdf Size:207K _fairchild_semi

RFD14N05SM9A
RFD14N05SM9A

RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs • 14A, 50V These are N-channel power MOSFETs manufactured using • rDS(ON) = 0.100Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits, gives optimum utili

2.2. rfd14n05-sm rfp14n05.pdf Size:381K _fairchild_semi

RFD14N05SM9A
RFD14N05SM9A

RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs • 14A, 50V These are N-channel power MOSFETs manufactured using • rDS(ON) = 0.100Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

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