RFD14N05SM9A. Аналоги и основные параметры
Наименование производителя: RFD14N05SM9A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Аналог (замена) для RFD14N05SM9A
- подборⓘ MOSFET транзистора по параметрам
RFD14N05SM9A даташит
rfd14n05sm9a.pdf
RFD14N05, RFD14N05SM Data Sheet February 2004 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti
rfd14n05sm9a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
rfd14n05l rfd14n05lsm rfp14n05l.pdf
RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utili
rfd14n05-sm rfp14n05.pdf
RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon
Другие MOSFET... HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , FDMS8018 , MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N , AON7506 , SI3443DV , SI4532DY , FDMA905P , FDME905PT , SI4542DY , FDC8886 , FCP190N60 , SSN1N45B .
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