All MOSFET. RFD14N05SM9A Datasheet

 

RFD14N05SM9A Datasheet and Replacement


   Type Designator: RFD14N05SM9A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252 DPAK
 

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RFD14N05SM9A Datasheet (PDF)

 ..1. Size:219K  fairchild semi
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RFD14N05SM9A

RFD14N05, RFD14N05SMData Sheet February 200414A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti

 ..2. Size:756K  onsemi
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RFD14N05SM9A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:207K  fairchild semi
rfd14n05l rfd14n05lsm rfp14n05l.pdf pdf_icon

RFD14N05SM9A

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili

 6.2. Size:381K  fairchild semi
rfd14n05-sm rfp14n05.pdf pdf_icon

RFD14N05SM9A

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

Datasheet: HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , FDMS8018 , MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N , IRFZ24N , SI3443DV , SI4532DY , FDMA905P , FDME905PT , SI4542DY , FDC8886 , FCP190N60 , SSN1N45B .

History: IPP050N06NG | RFD14N05 | SM4805PRL | ITF87052SVT | SPC6605 | NCE8205T | IPP052N06L3G

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