FDME905PT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDME905PT
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Encapsulados: UMLP1.6X1.6
Búsqueda de reemplazo de FDME905PT MOSFET
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FDME905PT datasheet
fdme905pt.pdf
October 2013 FDME905PT P-Channel PowerTrench MOSFET -12 V, -8 A, 22 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 A It features a MOSFET with low on-state resistance.
fdme910pzt.pdf
February 2015 FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 A It features a MOSFET with low on-state resistance
fdme910pzt.pdf
FDME910PZT P-Channel PowerTrench MOSFET General Description -20 V, -8 A, 24 m This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. Features It features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A diode protection against ESD. The MicroFET 1.6x1.6 T
Otros transistores... MTP3055VL, NDC7001C, FDMB2307NZ, NDS331N, RFD14N05SM9A, SI3443DV, SI4532DY, FDMA905P, AO4407, SI4542DY, FDC8886, FCP190N60, SSN1N45B, DMG1012T, DMG1012UW, DMG1024UV, DMG2302U
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