FDME905PT - аналоги, параметры транзистора - Справочник транзисторов

FDME905PT даташит

..1. Size:229K fairchild semi
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October 2013 FDME905PT P-Channel PowerTrench MOSFET -12 V, -8 A, 22 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 A It features a MOSFET with low on-state resistance.

9.1. Size:260K fairchild semi
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February 2015 FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 A It features a MOSFET with low on-state resistance

9.2. Size:425K onsemi
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FDME910PZT P-Channel PowerTrench MOSFET General Description -20 V, -8 A, 24 m This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. Features It features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A diode protection against ESD. The MicroFET 1.6x1.6 T

Другие MOSFET... MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , AO4407 , SI4542DY , FDC8886 , FCP190N60 , SSN1N45B , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U .