FDME905PT Datasheet and Replacement
Type Designator: FDME905PT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: UMLP1.6X1.6
FDME905PT substitution
FDME905PT Datasheet (PDF)
fdme905pt.pdf

October 2013FDME905PTP-Channel PowerTrench MOSFET -12 V, -8 A, 22 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 AIt features a MOSFET with low on-state resistance.
fdme910pzt.pdf

February 2015FDME910PZTP-Channel PowerTrench MOSFET-20 V, -8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 AIt features a MOSFET with low on-state resistance
fdme910pzt.pdf

FDME910PZTP-Channel PowerTrench MOSFETGeneral Description-20 V, -8 A, 24 mThis device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.FeaturesIt features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Adiode protection against ESD. The MicroFET 1.6x1.6 T
Datasheet: MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , P60NF06 , SI4542DY , FDC8886 , FCP190N60 , SSN1N45B , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U .
History: TK7E80W
Keywords - FDME905PT MOSFET datasheet
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History: TK7E80W



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