FDME905PT Specs and Replacement
Type Designator: FDME905PT
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: UMLP1.6X1.6
FDME905PT substitution
- MOSFET ⓘ Cross-Reference Search
FDME905PT datasheet
fdme905pt.pdf
October 2013 FDME905PT P-Channel PowerTrench MOSFET -12 V, -8 A, 22 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 A It features a MOSFET with low on-state resistance.... See More ⇒
fdme910pzt.pdf
February 2015 FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 A It features a MOSFET with low on-state resistance ... See More ⇒
fdme910pzt.pdf
FDME910PZT P-Channel PowerTrench MOSFET General Description -20 V, -8 A, 24 m This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. Features It features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A diode protection against ESD. The MicroFET 1.6x1.6 T... See More ⇒
Detailed specifications: MTP3055VL, NDC7001C, FDMB2307NZ, NDS331N, RFD14N05SM9A, SI3443DV, SI4532DY, FDMA905P, AO4407, SI4542DY, FDC8886, FCP190N60, SSN1N45B, DMG1012T, DMG1012UW, DMG1024UV, DMG2302U
Keywords - FDME905PT MOSFET specs
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