DMG3420U Todos los transistores

 

DMG3420U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG3420U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.47 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 434.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT23
 

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DMG3420U Datasheet (PDF)

 ..1. Size:156K  diodes
dmg3420u.pdf pdf_icon

DMG3420U

DMG3420UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish Matte Tin a

 ..2. Size:204K  tysemi
dmg3420u.pdf pdf_icon

DMG3420U

Product specificationDMG3420UN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 21m @ VGS = 10V 6.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)25m @ VGS = 4.5V 5.2A Halogen and Antimony Free

 0.1. Size:2333K  cn vbsemi
dmg3420u-7.pdf pdf_icon

DMG3420U

DMG3420U-7www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 9.1. Size:525K  diodes
dmg3404l.pdf pdf_icon

DMG3420U

DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 5.8A 25m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m @ VGS = 4.5V 4.8A Halogen and Antimony Free.

Otros transistores... FDC8886 , FCP190N60 , SSN1N45B , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U , DMG3414U , 7N60 , DMG5802LFX , DMG6898LSD , DMG6968U , DMG6968UDM , DMG6968UTS , DMG8601UFG , DMG8822UTS , DMG9926UDM .

History: SJMN099R60ZSW | SRM7N65TF-E1 | IRFB4215PBF | IRLML0040TRPBF | IRL3102SPBF | SRH03P098LMTR-G | NP32N055HHE

 

 
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