DMG3420U Datasheet. Specs and Replacement

Type Designator: DMG3420U  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.47 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 434.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT23

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DMG3420U datasheet

 ..1. Size:156K  diodes
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DMG3420U

DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals Finish Matte Tin a... See More ⇒

 ..2. Size:204K  tysemi
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DMG3420U

Product specification DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 21m @ VGS = 10V 6.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 25m @ VGS = 4.5V 5.2A Halogen and Antimony Free... See More ⇒

 0.1. Size:2333K  cn vbsemi
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DMG3420U

DMG3420U-7 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) ... See More ⇒

 9.1. Size:525K  diodes
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DMG3420U

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Detailed specifications: FDC8886, FCP190N60, SSN1N45B, DMG1012T, DMG1012UW, DMG1024UV, DMG2302U, DMG3414U, AO3407, DMG5802LFX, DMG6898LSD, DMG6968U, DMG6968UDM, DMG6968UTS, DMG8601UFG, DMG8822UTS, DMG9926UDM

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.