DMG3420U
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMG3420U
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 5.47
A
Qgⓘ - Total Gate Charge: 5.4
nC
Cossⓘ -
Output Capacitance: 434.7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
SOT23
DMG3420U
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMG3420U
Datasheet (PDF)
..1. Size:156K diodes
dmg3420u.pdf
DMG3420UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish Matte Tin a
..2. Size:204K tysemi
dmg3420u.pdf
Product specificationDMG3420UN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 21m @ VGS = 10V 6.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)25m @ VGS = 4.5V 5.2A Halogen and Antimony Free
0.1. Size:2333K cn vbsemi
dmg3420u-7.pdf
DMG3420U-7www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
9.1. Size:525K diodes
dmg3404l.pdf
DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 5.8A 25m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m @ VGS = 4.5V 4.8A Halogen and Antimony Free.
9.2. Size:141K diodes
dmg3414u.pdf
DMG3414UN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 37m
9.3. Size:281K diodes
dmg3402l.pdf
DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 52m @ VGS = 10V 4A Fast Switching Speed 30V 65m @ VGS = 4.5V 3A Low Input/Output Leakage 85m @ VGS = 2.5V 2A Totally Lead-Free & Fully RoHS Compliant (No
9.4. Size:188K diodes
dmg3414uq.pdf
DMG3414UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID maxV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 25m @ VGS = 4.5V 9A Low Input/Output Leakage 20V 29m @ VGS = 2.5V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 37m @ VGS = 1.8V 4.8A Halogen and Antimony
9.5. Size:617K diodes
dmg3406l.pdf
DMG3406L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 3.6A 50m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 2.8A Halogen and Antimony Free.
9.6. Size:128K diodes
dmg3415u.pdf
DMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 42.5m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 53m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D
9.7. Size:193K diodes
dmg3413l.pdf
DMG3413L20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Low Input/Output Leakage 95m @ VGS = -4.5V 3.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V 130m @ VGS = -2.5V 2.5A Halogen and Antimony Free.
9.8. Size:186K diodes
dmg3401lsn.pdf
DMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =
9.9. Size:143K diodes
dmg3415ufy4.pdf
DMG3415UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2015H4-3 39m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 52m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020
9.10. Size:241K diodes
dmg3418l.pdf
DMG3418LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 60m @VGS = 10V 4 A Fast Switching Speed 30V 70m @VGS = 4.5V 3 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 st
9.11. Size:107K tysemi
dmg3414u.pdf
Product specificationDMG3414UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 37m @ VGS = 1.8V Terminals: Finish
9.12. Size:178K tysemi
dmg3415u.pdf
Product specificationDMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Fast Switching Speed 42.5m @ VGS = -4.5V -4.0A -20V Low Input/Output Leakage 71m @ VGS = -1.8V -2.0A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS compliant (Notes 1 &
9.13. Size:100K tysemi
dmg3407ssn.pdf
Product specificationDMG3407SSNP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.0A Low Input/Output Leakage -30V Lead-Free Finish; RoHS compliant (Note 1) 72m @ VGS = -4.5V -3.3A Halogen and Antimony Free.
9.14. Size:94K tysemi
dmg3401lsn.pdf
Product specificationDMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (
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