JMTQ380C03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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JMTQ380C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 6A Battery ProtectionR

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JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R

9.2. Size:1288K jiejie micro
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60V, 35A, 14.3m N-channel Power Trench MOSFETJMTQ35N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 35 A Pb-free platingRDS(ON)_Typ(@VGS=10V 12.0 mWRDS(ON)_Typ(@VGS=4.5V 14.3 mWApplications Load Switch

9.3. Size:628K jiejie micro
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JMTQ3010DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 22A Load SwitchRDS(ON)

9.4. Size:1237K jiejie micro
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30V, 61A, 5.4m N-channel Power Trench MOSFETJMTQ3005CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 61 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.3 mWRDS(ON)_Typ(@VGS=4.5V 5.4 mWApplications Load Switch PW

9.5. Size:1240K jiejie micro
jmtq3008a.pdf pdf_icon

30V, 41A, 8.8m N-channel Power Trench MOSFETJMTQ3008AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 41 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=4.5V 8.8 mWApplications Load Switch PW

9.6. Size:1238K jiejie micro
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100V, 23A, 24.4m N-channel Power Trench MOSFETJMTQ320N10AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 23 ARDS(ON)_Typ(@VGS=10V 22.5 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 24.4 mWApplications Load Switch

9.7. Size:1120K jiejie micro
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JMTQ3005ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applicationsl 30V, 50A l Load Switch RDS(ON)

9.8. Size:1313K jiejie micro
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30V, 52A, 6.1m N-channel Power Trench MOSFETJMTQ3006CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 52 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.3 mWRDS(ON)_Typ(@VGS=4.5V 6.1 mWApplications Load Switch PW

9.9. Size:792K jiejie micro
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JMTQ3003ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 80A Load SwitchRDS(ON)

9.10. Size:1240K jiejie micro
jmtq3400d.pdf pdf_icon

30V, 40A, 11.3m N-channel Power Trench MOSFETJMTQ3400DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 40 A Pb-free platingRDS(ON)_Typ(@VGS=10V 10.6 mWRDS(ON)_Typ(@VGS=4.5V 11.3 mWApplications Load Switch

9.11. Size:485K jiejie micro
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