JMTQ380C03D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMTQ380C03D
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 2.1 nS
Cossⓘ - Capacitancia de salida: 44 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Encapsulados: PDFN3X3-8L-D
Búsqueda de reemplazo de JMTQ380C03D MOSFET
- Selecciónⓘ de transistores por parámetros
JMTQ380C03D datasheet
..1. Size:518K jiejie micro
jmtq380c03d.pdf 
JMTQ380C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 30V, 6A Battery Protection R
9.1. Size:627K 1
jmtq35n06a.pdf
JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R
9.3. Size:628K jiejie micro
jmtq3010d.pdf
JMTQ3010D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 30V, 22A Load Switch RDS(ON)
9.4. Size:1237K jiejie micro
jmtq3005c.pdf
30V, 61A, 5.4m N-channel Power Trench MOSFET JMTQ3005C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 61 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.3 mW RDS(ON)_Typ(@VGS=4.5V 5.4 mW Applications Load Switch PW
9.5. Size:1240K jiejie micro
jmtq3008a.pdf
30V, 41A, 8.8m N-channel Power Trench MOSFET JMTQ3008A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 41 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=4.5V 8.8 mW Applications Load Switch PW
9.6. Size:1238K jiejie micro
jmtq320n10a.pdf
100V, 23A, 24.4m N-channel Power Trench MOSFET JMTQ320N10A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 23 A RDS(ON)_Typ(@VGS=10V 22.5 mW Pb-free plating RDS(ON)_Typ(@VGS=4.5V 24.4 mW Applications Load Switch
9.7. Size:1120K jiejie micro
jmtq3005a.pdf
JMTQ3005A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications l 30V, 50A l Load Switch RDS(ON)
9.8. Size:1313K jiejie micro
jmtq3006c.pdf
30V, 52A, 6.1m N-channel Power Trench MOSFET JMTQ3006C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 52 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.3 mW RDS(ON)_Typ(@VGS=4.5V 6.1 mW Applications Load Switch PW
9.9. Size:792K jiejie micro
jmtq3003a.pdf
JMTQ3003A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 80A Load Switch RDS(ON)
9.10. Size:1240K jiejie micro
jmtq3400d.pdf
30V, 40A, 11.3m N-channel Power Trench MOSFET JMTQ3400D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 40 A Pb-free plating RDS(ON)_Typ(@VGS=10V 10.6 mW RDS(ON)_Typ(@VGS=4.5V 11.3 mW Applications Load Switch
9.11. Size:485K jiejie micro
jmtq3006b.pdf
JMTQ3006B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 40A Load Switch RDS(ON)
Otros transistores... JMTQ3005A, JMTQ3005C, JMTQ3006B, JMTQ3006C, JMTQ3008A, JMTQ3010D, JMTQ320N10A, JMTQ3400D, AOD4184A, JMTQ4407A, JMTQ440P04A, JMTQ60N04B, JMTQ90N02A, JMSL0403AG, JMSL0403AGQ, JMSL0403AU, JMSL0403PG
