JMTQ380C03D Datasheet and Replacement
Type Designator: JMTQ380C03D
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pd ⓘ
- Maximum Power Dissipation: 2.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 2.1
nS
Cossⓘ -
Output Capacitance: 44
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036
Ohm
Package: PDFN3X3-8L-D
-
MOSFET ⓘ Cross-Reference Search
JMTQ380C03D Datasheet (PDF)
..1. Size:518K jiejie micro
jmtq380c03d.pdf 
JMTQ380C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 6A Battery ProtectionR
9.1. Size:627K 1
jmtq35n06a.pdf 
JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R
9.2. Size:1288K jiejie micro
jmtq35n06a.pdf 
60V, 35A, 14.3m N-channel Power Trench MOSFETJMTQ35N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 35 A Pb-free platingRDS(ON)_Typ(@VGS=10V 12.0 mWRDS(ON)_Typ(@VGS=4.5V 14.3 mWApplications Load Switch
9.3. Size:628K jiejie micro
jmtq3010d.pdf 
JMTQ3010DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 22A Load SwitchRDS(ON)
9.4. Size:1237K jiejie micro
jmtq3005c.pdf 
30V, 61A, 5.4m N-channel Power Trench MOSFETJMTQ3005CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 61 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.3 mWRDS(ON)_Typ(@VGS=4.5V 5.4 mWApplications Load Switch PW
9.5. Size:1240K jiejie micro
jmtq3008a.pdf 
30V, 41A, 8.8m N-channel Power Trench MOSFETJMTQ3008AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 41 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=4.5V 8.8 mWApplications Load Switch PW
9.6. Size:1238K jiejie micro
jmtq320n10a.pdf 
100V, 23A, 24.4m N-channel Power Trench MOSFETJMTQ320N10AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 23 ARDS(ON)_Typ(@VGS=10V 22.5 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 24.4 mWApplications Load Switch
9.7. Size:1120K jiejie micro
jmtq3005a.pdf 
JMTQ3005ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applicationsl 30V, 50A l Load Switch RDS(ON)
9.8. Size:1313K jiejie micro
jmtq3006c.pdf 
30V, 52A, 6.1m N-channel Power Trench MOSFETJMTQ3006CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 52 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.3 mWRDS(ON)_Typ(@VGS=4.5V 6.1 mWApplications Load Switch PW
9.9. Size:792K jiejie micro
jmtq3003a.pdf 
JMTQ3003ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 80A Load SwitchRDS(ON)
9.10. Size:1240K jiejie micro
jmtq3400d.pdf 
30V, 40A, 11.3m N-channel Power Trench MOSFETJMTQ3400DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 40 A Pb-free platingRDS(ON)_Typ(@VGS=10V 10.6 mWRDS(ON)_Typ(@VGS=4.5V 11.3 mWApplications Load Switch
9.11. Size:485K jiejie micro
jmtq3006b.pdf 
JMTQ3006BDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 40A Load SwitchRDS(ON)
Datasheet: JMTQ3005A
, JMTQ3005C
, JMTQ3006B
, JMTQ3006C
, JMTQ3008A
, JMTQ3010D
, JMTQ320N10A
, JMTQ3400D
, HY1906P
, JMTQ4407A
, JMTQ440P04A
, JMTQ60N04B
, JMTQ90N02A
, , , , .
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