2SK3229 Todos los transistores

 

2SK3229 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3229

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 60 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 150 nC

Tiempo de elevación (tr): 280 nS

Conductancia de drenaje-sustrato (Cd): 1250 pF

Resistencia drenaje-fuente RDS(on): 0.0075 Ohm

Empaquetado / Estuche: TO220F

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2SK3229 Datasheet (PDF)

1.1. 2sk3229.pdf Size:53K _renesas

2SK3229
2SK3229

2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D 1. Gate 2. Drain G 3. Source S 1

4.1. 2sk3224-z.pdf Size:256K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk3225-z.pdf Size:266K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. 2sk3221.pdf Size:230K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. rej03g1094 2sk3228ds.pdf Size:101K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. 2sk3228.pdf Size:87K _renesas

2SK3229
2SK3229

2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 3 S Rev.4.00 May 15

4.6. 2sk322.pdf Size:29K _hitachi

2SK3229
2SK3229

2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 1. Drain 2. Source 2 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –15 V Gate to source voltage VGSO –15 V Drain current ID 50 mA Gate current IG 5mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 ° C St

4.7. 2sk3224-z.pdf Size:948K _kexin

2SK3229
2SK3229

SMD Type MOSFET N-Channel MOSFET 2SK3224-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) ● RDS(ON) < 40mΩ (VGS = 10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) < 60mΩ (VGS = 4V) ● Low Ciss : Ciss = 790 pF TYP. + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 Drain 2 Drain 3 So

4.8. 2sk3225.pdf Size:1697K _kexin

2SK3229
2SK3229

SMD Type MOSFET N-Channel MOSFET 2SK3225 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features ● VDS (V) = 60V 4 ● ID = 34 A (VGS = 10V) ● RDS(ON) < 18mΩ (VGS = 10V) 0.127 0.80+0.1 max -0.1 ● RDS(ON) < 27mΩ (VGS = 4V) ● Low input capacitance Ciss = 2100 pF TYP 1 Gate 2 Drain 2.3 0.60+ 0.1 - 0.1 3 Source +0.15 4.6

Otros transistores... 2SK3177 , 2SK3203 , 2SK3209 , 2SK3210 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , IRF630 , 2SK3233 , 2SK3234 , 2SK3235 , 2SK3270-01 , 2SK3271-01 , 2SK3272-01L , 2SK3272-01S , 2SK3273-01MR .

 

 
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