2SK3229 - описание и поиск аналогов

 ..1. Size:53K  renesas
 2sk3229.pdf 

2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate 2. Drain G 3. Source S 1

 ..2. Size:279K  inchange semiconductor
 2sk3229.pdf 

isc N-Channel MOSFET Transistor 2SK3229 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.1. Size:101K  renesas
 rej03g1094 2sk3228ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:266K  renesas
 2sk3225-z.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:87K  renesas
 2sk3228.pdf 

2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 3 S Rev.4.00 May 15

 8.4. Size:256K  renesas
 2sk3224-z.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:230K  renesas
 2sk3221.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:29K  hitachi
 2sk322.pdf 

2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 1. Drain 2. Source 2 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 15 V Gate to source voltage VGSO 15 V Drain current ID 50 mA Gate current IG 5mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 C St

 8.7. Size:948K  kexin
 2sk3224-z.pdf 

SMD Type MOSFET N-Channel MOSFET 2SK3224-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 40m (VGS = 10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 60m (VGS = 4V) Low Ciss Ciss = 790 pF TYP. + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 Drain 2 Drain 3 So

 8.8. Size:1697K  kexin
 2sk3225.pdf 

SMD Type MOSFET N-Channel MOSFET 2SK3225 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 Features VDS (V) = 60V 4 ID = 34 A (VGS = 10V) RDS(ON) 18m (VGS = 10V) 0.127 0.80+0.1 max -0.1 RDS(ON) 27m (VGS = 4V) Low input capacitance Ciss = 2100 pF TYP 1 Gate 2 Drain 2.3 0.60+ 0.1 - 0.1 3 Source +0.15 4.6

 8.9. Size:357K  inchange semiconductor
 2sk3221-az.pdf 

isc N-Channel MOSFET Transistor 2SK3221-AZ FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.10. Size:354K  inchange semiconductor
 2sk3224.pdf 

isc N-Channel MOSFET Transistor 2SK3224 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri

 8.11. Size:287K  inchange semiconductor
 2sk3225-z.pdf 

isc N-Channel MOSFET Transistor 2SK3225-Z FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.12. Size:287K  inchange semiconductor
 2sk3224-z.pdf 

isc N-Channel MOSFET Transistor 2SK3224-Z FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.13. Size:355K  inchange semiconductor
 2sk3225.pdf 

isc N-Channel MOSFET Transistor 2SK3225 FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid driv

 8.14. Size:289K  inchange semiconductor
 2sk3221.pdf 

isc N-Channel MOSFET Transistor 2SK3221 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid