All MOSFET. 2SK3229 Datasheet

 

2SK3229 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3229

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 280 nS

Drain-Source Capacitance (Cd): 1250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: TO220F

2SK3229 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3229 Datasheet (PDF)

0.1. 2sk3229.pdf Size:53K _renesas

2SK3229
2SK3229

2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. Gate2. DrainG3. SourceS1

8.1. 2sk3224-z.pdf Size:256K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. 2sk3225-z.pdf Size:266K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. 2sk3221.pdf Size:230K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. rej03g1094 2sk3228ds.pdf Size:101K _renesas

2SK3229
2SK3229

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. 2sk3228.pdf Size:87K _renesas

2SK3229
2SK3229

2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. Gate2. Drain (Flange)G3. Source123SRev.4.00 May 15

8.6. 2sk322.pdf Size:29K _hitachi

2SK3229
2SK3229

2SK322Silicon N-Channel Junction FETApplicationHF wide band amplifierOutlineMPAK311. Drain2. Source23. Gate2SK322Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 15 VGate to source voltage VGSO 15 VDrain current ID 50 mAGate current IG 5mAChannel power dissipation Pch 150 mWChannel temperature Tch 150 CSt

8.7. 2sk3224-z.pdf Size:948K _kexin

2SK3229
2SK3229

SMD Type MOSFETN-Channel MOSFET2SK3224-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features +0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 60m (VGS = 4V) Low Ciss : Ciss = 790 pF TYP.+ 0.12.3 0.60- 0.11 Gate+0.154 .60 -0.15Drain2 Drain3 So

8.8. 2sk3225.pdf Size:1697K _kexin

2SK3229
2SK3229

SMD Type MOSFETN-Channel MOSFET2SK3225TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features VDS (V) = 60V 4 ID = 34 A (VGS = 10V) RDS(ON) 18m (VGS = 10V)0.1270.80+0.1 max-0.1 RDS(ON) 27m (VGS = 4V) Low input capacitanceCiss = 2100 pF TYP 1 Gate2 Drain2.3 0.60+ 0.1- 0.13 Source+0.154.6

Datasheet: 2SK3177 , 2SK3203 , 2SK3209 , 2SK3210 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , IRF630 , 2SK3233 , 2SK3234 , 2SK3235 , 2SK3270-01 , 2SK3271-01 , 2SK3272-01L , 2SK3272-01S , 2SK3273-01MR .

 

 
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