DMN26D0UFB4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN26D0UFB4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.23 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 14.1 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: X2DFN10063
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DMN26D0UFB4 Datasheet (PDF)
dmn26d0ufb4.pdf

DMN26D0UFB4N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 3.0 @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 4.0 @ 2.5V Terminal Connections: See Diag
dmn26d0udj.pdf

DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET V(BR)DSS RDS(on) TA = +25C Low On-Resistance: 3.0 @ VGS= 4.5V 240mA 3.0@ 4.5V 20V 180mA 6.0 @ VGS= 1.8V 4.0@ 2.5V 6.0@1.8V 10@1.5V Description Very Low Gate Threshold Voltage, 1.05V Max This new
dmn26d0ut.pdf

DMN26D0UTN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: Case: SOT-523 3.0 @ 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 4.0 @ 2.5V Moisture Sensitivity: Level 1 per J-STD-020 6.0 @ 1.8V
Otros transistores... DMN2215UDM , DMN2230U , DMN2300U , DMN2300UFB , DMN2300UFB4 , DMN2400UFB4 , DMN2400UV , DMN26D0UDJ , IRFZ44 , DMN26D0UT , DMN2990UDJ , ZXM61N02F , ZXM62N02E6 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 .
History: AOTF10T60P | HRP45N06K | S15H12RN | 2SK3978 | STB9NK80Z | BR40P03 | TPCA8101
History: AOTF10T60P | HRP45N06K | S15H12RN | 2SK3978 | STB9NK80Z | BR40P03 | TPCA8101



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