DMN26D0UFB4 Datasheet and Replacement. Cross Reference Search

DMN26D0UFB4 Datasheet (PDF)

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DMN26D0UFB4N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 3.0 @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 4.0 @ 2.5V Terminal Connections: See Diag

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DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET V(BR)DSS RDS(on) TA = +25C Low On-Resistance: 3.0 @ VGS= 4.5V 240mA 3.0@ 4.5V 20V 180mA 6.0 @ VGS= 1.8V 4.0@ 2.5V 6.0@1.8V 10@1.5V Description Very Low Gate Threshold Voltage, 1.05V Max This new

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DMN26D0UTN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: Case: SOT-523 3.0 @ 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 4.0 @ 2.5V Moisture Sensitivity: Level 1 per J-STD-020 6.0 @ 1.8V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .