ZXM62N02E6 Todos los transistores

 

ZXM62N02E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM62N02E6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT26
 

 Búsqueda de reemplazo de ZXM62N02E6 MOSFET

   - Selección ⓘ de transistores por parámetros

 

ZXM62N02E6 Datasheet (PDF)

 ..1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 ..2. Size:153K  diodes
 zxm62n02e6 2n02sot23-6.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 0.1. Size:185K  zetex
 zxm62n02e6ta.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 7.1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N02E6

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

MOSTRAR MÁS

Otros transistores... DMN2300UFB4 , DMN2400UFB4 , DMN2400UV , DMN26D0UDJ , DMN26D0UFB4 , DMN26D0UT , DMN2990UDJ , ZXM61N02F , IRFB4110 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , ZXMN2A01F , ZXMN2A02N8 , ZXMN2A02X8 , ZXMN2A03E6 .

History: PS06N20DEA | NTMFS1D15N03CG

 

 
Back to Top

 


 
.