ZXM62N02E6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM62N02E6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 460 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: SOT26
Búsqueda de reemplazo de ZXM62N02E6 MOSFET
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ZXM62N02E6 datasheet
zxm62n02e6.pdf
ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r
zxm62n02e6 2n02sot23-6.pdf
ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r
zxm62n02e6ta.pdf
ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r
zxm62n03g.pdf
ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist
Otros transistores... DMN2300UFB4, DMN2400UFB4, DMN2400UV, DMN26D0UDJ, DMN26D0UFB4, DMN26D0UT, DMN2990UDJ, ZXM61N02F, IRFB4110, ZXM64N02X, ZXMD63N02X, ZXMN2088DE6, ZXMN2A01E6, ZXMN2A01F, ZXMN2A02N8, ZXMN2A02X8, ZXMN2A03E6
History: CS5N70U
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