Справочник MOSFET. ZXM62N02E6

 

ZXM62N02E6 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM62N02E6
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Cossⓘ - Выходная емкость: 460 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT26
     - подбор MOSFET транзистора по параметрам

 

ZXM62N02E6 Datasheet (PDF)

 ..1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 ..2. Size:153K  diodes
 zxm62n02e6 2n02sot23-6.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 0.1. Size:185K  zetex
 zxm62n02e6ta.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 7.1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N02E6

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

ПОКАЗАТЬ ЕЩЁ

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History: HGN120N10A | AP2306CGN-HF | SLF32N20C | SVT034R0NL5 | WSD3030DN | FQPF9N50T | IPP041N12N3

 

 
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