ZXM62N02E6. Аналоги и основные параметры
Наименование производителя: ZXM62N02E6
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Электрические характеристики
Cossⓘ - Выходная емкость: 460 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT26
Аналог (замена) для ZXM62N02E6
- подборⓘ MOSFET транзистора по параметрам
ZXM62N02E6 даташит
zxm62n02e6.pdf
ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r
zxm62n02e6 2n02sot23-6.pdf
ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r
zxm62n02e6ta.pdf
ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r
zxm62n03g.pdf
ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist
Другие IGBT... DMN2300UFB4, DMN2400UFB4, DMN2400UV, DMN26D0UDJ, DMN26D0UFB4, DMN26D0UT, DMN2990UDJ, ZXM61N02F, IRFB4110, ZXM64N02X, ZXMD63N02X, ZXMN2088DE6, ZXMN2A01E6, ZXMN2A01F, ZXMN2A02N8, ZXMN2A02X8, ZXMN2A03E6
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