Справочник MOSFET. ZXM62N02E6

 

ZXM62N02E6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXM62N02E6
   Маркировка: 2N02
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 0.7 V
   Максимально допустимый постоянный ток стока |Id|: 3.2 A
   Общий заряд затвора (Qg): 6.3 nC
   Выходная емкость (Cd): 460 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
   Тип корпуса: SOT26

 Аналог (замена) для ZXM62N02E6

 

 

ZXM62N02E6 Datasheet (PDF)

 ..1. Size:186K  diodes
 zxm62n02e6.pdf

ZXM62N02E6 ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 ..2. Size:153K  diodes
 zxm62n02e6 2n02sot23-6.pdf

ZXM62N02E6 ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 0.1. Size:185K  zetex
 zxm62n02e6ta.pdf

ZXM62N02E6 ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 7.1. Size:152K  diodes
 zxm62n03g.pdf

ZXM62N02E6 ZXM62N02E6

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

 7.2. Size:150K  zetex
 zxm62n03gta.pdf

ZXM62N02E6 ZXM62N02E6

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

 7.3. Size:147K  zetex
 zxm62n03e6ta.pdf

ZXM62N02E6 ZXM62N02E6

ZXM62N03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.11 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

Другие MOSFET... DMN2300UFB4 , DMN2400UFB4 , DMN2400UV , DMN26D0UDJ , DMN26D0UFB4 , DMN26D0UT , DMN2990UDJ , ZXM61N02F , 10N60 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , ZXMN2A01F , ZXMN2A02N8 , ZXMN2A02X8 , ZXMN2A03E6 .

 

 
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