All MOSFET. ZXM62N02E6 Datasheet

 

ZXM62N02E6 Datasheet and Replacement


   Type Designator: ZXM62N02E6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT26
 

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ZXM62N02E6 Datasheet (PDF)

 ..1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 ..2. Size:153K  diodes
 zxm62n02e6 2n02sot23-6.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 0.1. Size:185K  zetex
 zxm62n02e6ta.pdf pdf_icon

ZXM62N02E6

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 7.1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N02E6

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

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Datasheet: DMN2300UFB4 , DMN2400UFB4 , DMN2400UV , DMN26D0UDJ , DMN26D0UFB4 , DMN26D0UT , DMN2990UDJ , ZXM61N02F , IRF640N , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , ZXMN2A01F , ZXMN2A02N8 , ZXMN2A02X8 , ZXMN2A03E6 .

History: 2SK320 | UT2304

Keywords - ZXM62N02E6 MOSFET datasheet

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