ZXM64N02X MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM64N02X

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: MSOP8

 Búsqueda de reemplazo de ZXM64N02X MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXM64N02X datasheet

 ..1. Size:338K  diodes
 zxm64n02x.pdf pdf_icon

ZXM64N02X

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 0.1. Size:161K  zetex
 zxm64n02xta.pdf pdf_icon

ZXM64N02X

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 0.2. Size:161K  zetex
 zxm64n02xtc.pdf pdf_icon

ZXM64N02X

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 7.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N02X

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

MOSTRAR MÁS

Otros transistores... DMN2400UFB4, DMN2400UV, DMN26D0UDJ, DMN26D0UFB4, DMN26D0UT, DMN2990UDJ, ZXM61N02F, ZXM62N02E6, IRF640N, ZXMD63N02X, ZXMN2088DE6, ZXMN2A01E6, ZXMN2A01F, ZXMN2A02N8, ZXMN2A02X8, ZXMN2A03E6, ZXMN2A04DN8