All MOSFET. ZXM64N02X Datasheet

 

ZXM64N02X Datasheet and Replacement


   Type Designator: ZXM64N02X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: MSOP8
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ZXM64N02X Datasheet (PDF)

 ..1. Size:338K  diodes
 zxm64n02x.pdf pdf_icon

ZXM64N02X

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 0.1. Size:161K  zetex
 zxm64n02xta.pdf pdf_icon

ZXM64N02X

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 0.2. Size:161K  zetex
 zxm64n02xtc.pdf pdf_icon

ZXM64N02X

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 7.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N02X

ZXM64N035L335V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on-r

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Keywords - ZXM64N02X MOSFET datasheet

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