Справочник MOSFET. ZXM64N02X

 

ZXM64N02X Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM64N02X
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: MSOP8
 

 Аналог (замена) для ZXM64N02X

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXM64N02X Datasheet (PDF)

 ..1. Size:338K  diodes
 zxm64n02x.pdf pdf_icon

ZXM64N02X

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 0.1. Size:161K  zetex
 zxm64n02xta.pdf pdf_icon

ZXM64N02X

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 0.2. Size:161K  zetex
 zxm64n02xtc.pdf pdf_icon

ZXM64N02X

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 7.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N02X

ZXM64N035L335V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on-r

ПОКАЗАТЬ ЕЩЁ

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History: ZXMD63N03X | UF830G-TM3-T | IPW60R199CP | 2SK4062LS | HM50N20D | AP2622GY

 

 
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