ZXM64N02X. Аналоги и основные параметры

Наименование производителя: ZXM64N02X

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.4 A

Электрические характеристики

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm

Тип корпуса: MSOP8

Аналог (замена) для ZXM64N02X

- подборⓘ MOSFET транзистора по параметрам

 

ZXM64N02X даташит

 ..1. Size:338K  diodes
 zxm64n02x.pdf pdf_icon

ZXM64N02X

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 0.1. Size:161K  zetex
 zxm64n02xta.pdf pdf_icon

ZXM64N02X

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 0.2. Size:161K  zetex
 zxm64n02xtc.pdf pdf_icon

ZXM64N02X

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 7.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N02X

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

ПОКАЗАТЬ ЕЩЁ

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