ZXMN2A02X8 Todos los transistores

 

ZXMN2A02X8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN2A02X8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.67 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: MSOP8
 

 Búsqueda de reemplazo de ZXMN2A02X8 MOSFET

   - Selección ⓘ de transistores por parámetros

 

ZXMN2A02X8 Datasheet (PDF)

 ..1. Size:247K  diodes
 zxmn2a02x8.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 0.1. Size:246K  zetex
 zxmn2a02x8ta.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 0.2. Size:246K  zetex
 zxmn2a02x8tc.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 6.1. Size:158K  diodes
 zxmn2a02n8.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

MOSTRAR MÁS

Otros transistores... ZXM61N02F , ZXM62N02E6 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , ZXMN2A01F , ZXMN2A02N8 , IRFB4110 , ZXMN2A03E6 , ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 , ZXMN2B14FH , ZXMN2F30FH .

History: FDS4465-NL-9 | AP4910GD | JCS13N50SC | 2SK2825

 

 
Back to Top

 


 
.