All MOSFET. ZXMN2A02X8 Datasheet

 

ZXMN2A02X8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN2A02X8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Qgⓘ - Total Gate Charge: 18.6 nC
   Cossⓘ - Output Capacitance: 1900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: MSOP8

 ZXMN2A02X8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN2A02X8 Datasheet (PDF)

 ..1. Size:247K  diodes
 zxmn2a02x8.pdf

ZXMN2A02X8 ZXMN2A02X8

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 0.1. Size:246K  zetex
 zxmn2a02x8ta.pdf

ZXMN2A02X8 ZXMN2A02X8

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 0.2. Size:246K  zetex
 zxmn2a02x8tc.pdf

ZXMN2A02X8 ZXMN2A02X8

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 6.1. Size:158K  diodes
 zxmn2a02n8.pdf

ZXMN2A02X8 ZXMN2A02X8

ZXMN2A02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

 6.2. Size:154K  zetex
 zxmn2a02n8ta.pdf

ZXMN2A02X8 ZXMN2A02X8

ZXMN2A02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

Datasheet: ZXM61N02F , ZXM62N02E6 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , ZXMN2A01F , ZXMN2A02N8 , IRFB4115 , ZXMN2A03E6 , ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 , ZXMN2B14FH , ZXMN2F30FH .

 

 
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