ZXMN2A02X8. Аналоги и основные параметры

Наименование производителя: ZXMN2A02X8

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.67 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.8 A

Электрические характеристики

Cossⓘ - Выходная емкость: 1900 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm

Тип корпуса: MSOP8

Аналог (замена) для ZXMN2A02X8

- подборⓘ MOSFET транзистора по параметрам

 

ZXMN2A02X8 даташит

 ..1. Size:247K  diodes
 zxmn2a02x8.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance

 0.1. Size:246K  zetex
 zxmn2a02x8ta.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance

 0.2. Size:246K  zetex
 zxmn2a02x8tc.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance

 6.1. Size:158K  diodes
 zxmn2a02n8.pdf pdf_icon

ZXMN2A02X8

ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance

ПОКАЗАТЬ ЕЩЁ

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