ZXMN2B03E6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN2B03E6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT26

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ZXMN2B03E6 datasheet

 ..1. Size:585K  diodes
 zxmn2b03e6.pdf pdf_icon

ZXMN2B03E6

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga

 0.1. Size:582K  zetex
 zxmn2b03e6ta.pdf pdf_icon

ZXMN2B03E6

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga

 7.1. Size:391K  diodes
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6

ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low gate

 7.2. Size:102K  tysemi
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6

Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from TY features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching spe

MOSTRAR MÁS

Otros transistores... ZXMN2A01F, ZXMN2A02N8, ZXMN2A02X8, ZXMN2A03E6, ZXMN2A04DN8, ZXMN2A14F, ZXMN2AMC, ZXMN2B01F, IRFP250N, ZXMN2B14FH, ZXMN2F30FH, ZXMN2F34FH, ZXMN2F34MA, DMG4466SSS, DMG4466SSSL, DMG4468LFG, DMG4468LK3