ZXMN2B03E6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMN2B03E6
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.1 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 5.4 A
Общий заряд затвора (Qg): 14.5 nC
Выходная емкость (Cd): 1160 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
Тип корпуса: SOT26
Аналог (замена) для ZXMN2B03E6
ZXMN2B03E6 Datasheet (PDF)
zxmn2b03e6.pdf
ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga
zxmn2b03e6ta.pdf
ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga
zxmn2b01f.pdf
ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate
zxmn2b01f.pdf
Product specificationZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from TY features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching spe
zxmn2b01fta.pdf
ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate
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