ZXMN2B03E6 Specs and Replacement

Type Designator: ZXMN2B03E6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 1160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT26

ZXMN2B03E6 substitution

- MOSFET ⓘ Cross-Reference Search

 

ZXMN2B03E6 datasheet

 ..1. Size:585K  diodes
 zxmn2b03e6.pdf pdf_icon

ZXMN2B03E6

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga... See More ⇒

 0.1. Size:582K  zetex
 zxmn2b03e6ta.pdf pdf_icon

ZXMN2B03E6

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga... See More ⇒

 7.1. Size:391K  diodes
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6

ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low gate ... See More ⇒

 7.2. Size:102K  tysemi
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6

Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from TY features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching spe... See More ⇒

SHOW MORE

Detailed specifications: ZXMN2A01F, ZXMN2A02N8, ZXMN2A02X8, ZXMN2A03E6, ZXMN2A04DN8, ZXMN2A14F, ZXMN2AMC, ZXMN2B01F, IRFP250N, ZXMN2B14FH, ZXMN2F30FH, ZXMN2F34FH, ZXMN2F34MA, DMG4466SSS, DMG4466SSSL, DMG4468LFG, DMG4468LK3

Keywords - ZXMN2B03E6 MOSFET specs

 ZXMN2B03E6 cross reference

 ZXMN2B03E6 equivalent finder

 ZXMN2B03E6 pdf lookup

 ZXMN2B03E6 substitution

 ZXMN2B03E6 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility