JMSL0630AG Datasheet. Equivalente

 ..1. Size:383K  jiejie micro
 jmsl0630ag.pdf

JMSL0630AG 60V 22m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 25 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V) 28 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom.,

 0.1. Size:386K  jiejie micro
 jmsl0630agd.pdf

JMSL0630AGD 60V 22m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 23 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V) 28 m Halogen-free and RoHS-compliant Applications Power Managerment in

 5.1. Size:378K  jiejie micro
 jmsl0630au.pdf

JMSL0630AU 60V 22m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 20 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V) 30 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom.,

 8.1. Size:277K  1
 jmsl0606ag.pdf

JMSL0606AG 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V) 4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V) 5.2 m Applications Power Managerment in Telecom., Industrial

 8.2. Size:319K  jiejie micro
 jmsl0609ap.pdf

JMSL0609AP 60V 7.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 13.6 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.5 m RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m Halogen-free and RoHS-compliant Applications Power Manag

 8.3. Size:397K  jiejie micro
 jmsl0601bg.pdf

JMSL0601BG 60V 1.25m N-Ch Power MOSFET Features Product Summary Low RDS(ON) Parameter Value Unit Low Gate Charge VDS 60 V VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 226 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.25 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 1.8 m Applications Power Mana

 8.4. Size:352K  jiejie micro
 jmsl0606akq.pdf

JMSL0606AKQ 60V 4.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 93 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.6 m RDS(ON)_Typ (@ VGS = 4.5V) 6.0 m Halogen-free and RoHS-compliant AEC-Q101 Qu

 8.5. Size:336K  jiejie micro
 jmsl0610agdq.pdf

JMSL0610AGDQ 60V 8.5m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 38 A RDS(ON)_Typ (@ VGS = 10V) 8.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.2 m Halogen-free and RoHS-compliant AE

 8.6. Size:347K  jiejie micro
 jmsl0601ag.pdf

JMSL0601AG 60V 0.90m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 275 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.90 m RDS(ON)_Typ (@ VGS = 4.5V) 1.3 m Halogen-free and RoHS-compliant Applications Power Mana

 8.7. Size:1237K  jiejie micro
 jmsl0612pp.pdf

60V, 11A, 11.4 m N-channel Power SGT MOSFET JMSL0612PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 11 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.0 mW RDS(ON)_Typ(@VGS=4.5V 11.4 mW Applications Load Switch P

 8.8. Size:371K  jiejie micro
 jmsl0615agdq.pdf

JMSL0615AGDQ 60V 10.5m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 33 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.5 m RDS(ON)_Typ (@ VGS = 4.5V) 13.5 m Halogen-free and RoHS-compliant AEC-Q101

 8.9. Size:347K  jiejie micro
 jmsl0602ag.pdf

JMSL0602AG 60V 1.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 m RDS(ON)_Typ (@ VGS = 4.5V) 2.4 m Halogen-free and RoHS-compliant Applications Power Manage

 8.10. Size:305K  jiejie micro
 jmsl0620agdeq.pdf

JMSL0620AGDEQ 60V 18m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 18.0 m RDS(ON)_Typ (@ VGS = 4.5V) 25 m Pb-free Lead Plati

 8.11. Size:284K  jiejie micro
 jmsl0615av.pdf

JMSL0615AV 60V 9.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 21 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 9.8 m RDS(ON)_Typ (@ VGS = 4.5V) 12.5 m Halogen-free and RoHS-compliant Applications Power Manag

 8.12. Size:1265K  jiejie micro
 jmsl0609ppd.pdf

60V, 11A, 11.7m N-channel Power SGT MOSFET JMSL0609PPD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 11 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.5 mW RDS(ON)_Typ(@VGS=4.5V 11.7 mW Applications Load Switch P

 8.13. Size:1193K  jiejie micro
 jmsl0608pg.pdf

60V, 79A, 8m N-channel Power SGT MOSFET JMSL0608PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 79 A RDS(ON)_Typ(@VGS=10V 6.2 mW RDS(ON)_Typ(@VGS=4.5V 8.0 mW Applications Load Switch PWM Application Power

 8.14. Size:1235K  jiejie micro
 jmsl0612pu.pdf

60V, 40A, 10.6m N-channel Power SGT MOSFET JMSL0612PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 40 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.4 mW RDS(ON)_Typ(@VGS=4.5V 10.6 mW Applications Load Switch PW

 8.15. Size:332K  jiejie micro
 jmsl0610agd.pdf

JMSL0610AGD 60V 8.5m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 35 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.5 m RDS(ON)_Typ (@ VGS = 4.5V) 10.2 m Halogen-free and RoHS-compliant Applications Powe

 8.16. Size:1246K  jiejie micro
 jmsl0606pe.pdf

60V, 117A, 5.3m N-channel Power SGT MOSFET JMSL0606PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 117 A RDS(ON)_Typ(@VGS=10V 4.2 mW RDS(ON)_Typ(@VGS=4.5V 5.3 mW Applications Load Switch PWM Application Po

 8.17. Size:343K  jiejie micro
 jmsl0606pu.pdf

JMSL0606PU 60V 3.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 69 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.9 m RDS(ON)_Typ (@ VGS = 4.5V) 5.1 m Halogen-free and RoHS-compliant Applications Power Man

 8.18. Size:338K  jiejie micro
 jmsl0606auq.pdf

JMSL0606AUQ 60V 5.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.0 m RDS(ON)_Typ (@ VGS = 4.5V) 6.0 m Halogen-free and RoHS-compliant AEC-Q101

 8.19. Size:409K  jiejie micro
 jmsl0612agq.pdf

JMSL0612AGQ 60V 9.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.5 m RDS(ON)_Typ (@ VGS = 4.5V) 12.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi

 8.20. Size:518K  jiejie micro
 jmsl0606au.pdf

JMSL0606AU 60V 5.0mW N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 5.0 mW RDS(ON) (@ VGS = 4.5V) 6.6 mW Halogen-free and RoHS-compliant Applications Power Management in Compu

 8.21. Size:337K  jiejie micro
 jmsl0609auq.pdf

JMSL0609AUQ 60V 7.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 44 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.5 m RDS(ON)_Typ (@ VGS = 4.5V) 9.4 m Halogen-free and RoHS-compliant AEC-Q101 Qu

 8.22. Size:1284K  jiejie micro
 jmsl0608pk.pdf

60V, 53A, 8.7m N-channel Power SGT MOSFET JMSL0608PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 53 A RDS(ON)_Typ(@VGS=10V 6.8 mW Applications RDS(ON)_Typ(@VGS=4.5V 8.7 mW Load Switch PWM Application Power

 8.23. Size:1179K  jiejie micro
 jmsl0608pgd.pdf

60V, 37A, 11m Dual N-channel Power SGT MOSFET JMSL0608PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 37 A RDS(ON)_Typ(@VGS=10V 8 mW Applications RDS(ON)_Typ(@VGS=4.5V 11 mW Load Switch PWM Application Pow

 8.24. Size:400K  jiejie micro
 jmsl0620age.pdf

JMSL0620AGE 60V 16m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 31 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 16.0 m RDS(ON)_Typ (@ VGS = 4.5V) 23 m Pb-free Lead Plating, Hal

 8.25. Size:413K  jiejie micro
 jmsl0601agq.pdf

JMSL0601AGQ 60V 0.90m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 315 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.90 m RDS(ON)_Typ (@ VGS = 4.5V) 1.3 m Halogen-free and RoHS-compliant AEC-Q101

 8.26. Size:404K  jiejie micro
 jmsl0612akq.pdf

JMSL0612AKQ 60V 9.9m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 57 A RDS(ON) (@ VGS = 10V) 9.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 12.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli

 8.27. Size:346K  jiejie micro
 jmsl0605agdq.pdf

JMSL0605AGDQ 60V 4.4m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 61 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.4 m RDS(ON)_Typ (@ VGS = 4.5V) 5.6 m Halogen-free and RoHS-compliant AEC-Q101

 8.28. Size:378K  jiejie micro
 jmsl0603bgq.pdf

JMSL0603BGQ 60V 2.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 147 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.4 m RDS(ON)_Typ (@ VGS = 4.5V) 3.4 m Halogen-free and RoHS-compliant AEC-Q101

 8.29. Size:313K  jiejie micro
 jmsl0615agd.pdf

JMSL0615AGD 60V 10.5m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 31 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.5 m RDS(ON)_Typ (@ VGS = 4.5V) 13.5 m Halogen-free and RoHS-compliant Applications Power M

 8.30. Size:327K  jiejie micro
 jmsl0606ap.pdf

JMSL0606AP 60V 5.3m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 15 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.3 m RDS(ON)_Typ (@ VGS = 4.5V) 6.7 m Halogen-free and RoHS-compliant Applications Power

 8.31. Size:1192K  jiejie micro
 jmsl0612pg.pdf

60V, 67A, 10.5m N-channel Power SGT MOSFET JMSL0612PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V ID(@VGS=10V) 67 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW RDS(ON)_Typ(@VGS=4.5V 10.5 mW Applications Load Switch PWM Application Pow

 8.32. Size:400K  jiejie micro
 jmsl0620ageq.pdf

JMSL0620AGEQ 60V 16m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 32 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 16.0 m RDS(ON)_Typ (@ VGS = 4.5V) 23 m Pb-free Lead Plating, Ha

 8.33. Size:608K  jiejie micro
 jmsl06120uq.pdf

 8.34. Size:1273K  jiejie micro
 jmsl0602pg.pdf

60V, 209A, 2.1m N-channel Power SGT MOSFET JMSL0602PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 209 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.7 mW RDS(ON)_Typ(@VGS=4.5V 2.1 mW Applications Load Switch PW

 8.35. Size:1193K  jiejie micro
 jmsl0612pgq.pdf

60V, 72A, 10.5m N-channel Power SGT MOSFET JMSL0612PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 1.9 V 100% Vds Tested ID(@VGS=10V) 72 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 10.5 mW Applications

 8.36. Size:379K  jiejie micro
 jmsl0620aue.pdf

JMSL0620AUE 60V 16m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 24 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 16.0 m RDS(ON)_Typ (@ VGS = 4.5V) 23 m Pb-free Lead Plating

 8.37. Size:1379K  jiejie micro
 jmsl0611pud.pdf

 8.38. Size:1180K  jiejie micro
 jmsl0615pgdq.pdf

60V, 37A, 12.1m Dual N-channel Power SGT MOSFET JMSL0615PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 1.9 V 100% Vds Tested ID(@VGS=10V) 37 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 8.3 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 12.1 mW Application

 8.39. Size:402K  jiejie micro
 jmsl0609akq.pdf

JMSL0609AKQ 60V 7.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) 7.4 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Auto

 8.40. Size:353K  jiejie micro
 jmsl0603ak.pdf

JMSL0603AK 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.6 m RDS(ON)_Typ (@ VGS = 4.5V) 3.3 Halogen-free and RoHS-compliant m Applications Power M

 8.41. Size:1233K  jiejie micro
 jmsl0608pp.pdf

60V, 14A, 9.4m N-channel Power SGT MOSFET JMSL0608PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 14 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.9 mW RDS(ON)_Typ(@VGS=4.5V 9.4 mW Applications Load Switch PWM

 8.42. Size:1291K  jiejie micro
 jmsl0603pg.pdf

60V, 154A, 2.7m N-channel Power SGT MOSFET JMSL0603PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 154 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.1 mW RDS(ON)_Typ(@VGS=4.5V 2.7 mW Applications Load Switch PW

 8.43. Size:332K  jiejie micro
 jmsl0606pg.pdf

JMSL0606PG 60V 3.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m RDS(ON)_Typ (@ VGS = 4.5V) 4.5 m Halogen-free and RoHS-compliant Applications Power Ma

 8.44. Size:349K  jiejie micro
 jmsl0612ag.pdf

JMSL0612AG 60V 9.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 34 A RDS(ON)_Typ (@ VGS = 10V) 9.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 12.0 m Halogen-free and RoHS-compliant Applications Power Mana

 8.45. Size:348K  jiejie micro
 jmsl0609ag.pdf

JMSL0609AG 60V 7.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 43 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.2 m RDS(ON)_Typ (@ VGS = 4.5V) 9.0 m Halogen-free and RoHS-compliant Applications Power Managem

 8.46. Size:282K  jiejie micro
 jmsl0615aud.pdf

JMSL0615AUD 60V 11.0m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 24 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 11.0 m RDS(ON)_Typ (@ VGS = 4.5V) 14.0 m Halogen-free and RoHS-compliant Applications Powe

 8.47. Size:414K  jiejie micro
 jmsl0609agq.pdf

JMSL0609AGQ 60V 7.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.2 m RDS(ON)_Typ (@ VGS = 4.5V) 9.0 m Halogen-free and RoHS-compliant AEC-Q101

 8.48. Size:1201K  jiejie micro
 jmsl0601tg.pdf

60V, 294A, 1.1m N-channel Power SGT MOSFET JMSL0601TG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.3 V Halogen-free; RoHS-compliant ID(@VGS=10V) 294 A RDS(ON)_Typ(@VGS=10V 0.9 mW RDS(ON)_Typ(@VGS=4.5V 1.1 mW Applications Load Switch PWM Application Pow

 8.49. Size:371K  jiejie micro
 jmsl0609au.pdf

JMSL0609AU 60V 7.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 41 A RDS(ON)_Typ (@ VGS = 10V) 7.5 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V) 9.4 m Halogen-free and RoHS-compliant Applications Power

 8.50. Size:310K  jiejie micro
 jmsl0615apd.pdf

JMSL0615APD 60V 12m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 9.7 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 12 m RDS(ON)_Typ (@ VGS = 4.5V) 15 m Halogen-free and RoHS-compliant Applications Power Ma

 8.51. Size:1234K  jiejie micro
 jmsl0611pu.pdf

60V, 34A, 12.2m N-channel Power SGT MOSFET JMSL0611PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.0 mW RDS(ON)_Typ(@VGS=4.5V 12.2 mW Applications Load Switch PW

 8.52. Size:677K  jiejie micro
 jmsl060spgq.pdf

60V, 283A, 1.4m N-channel Power SGT MOSFET JMSL060SPGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 283 A RDS(ON)_Typ(@VGS=10V 1.0 m Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=4.5V 1.4 m AEC-Q101 Qualified Applications

 8.53. Size:315K  jiejie micro
 jmsl0603bg.pdf

 8.54. Size:1230K  jiejie micro
 jmsl0611pp.pdf

60V, 10A, 12.3m N-channel Power SGT MOSFET JMSL0611PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 10 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW

 8.55. Size:284K  jiejie micro
 jmsl0606agd.pdf

JMSL0606AGD 60V 6.4m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 55 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.4 m RDS(ON) (@ VGS = 4.5V) 7.6 m Halogen-free and RoHS-compliant Applications Power Managerment

 8.56. Size:1266K  jiejie micro
 jmsl0612ppd.pdf

60V, 9.3A, 13.8m N-channel Dual Power SGT MOSFET JMSL0612PPD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 9.3 A Pb-free plating RDS(ON)_Typ(@VGS=10V 10.3 mW RDS(ON)_Typ(@VGS=4.5V 13.8 mW Applications Load Switc

 8.57. Size:1240K  jiejie micro
 jmsl0605pg.pdf

60V, 100A, 5.5m N-channel Power SGT MOSFET JMSL0605PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 100 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.9 mW RDS(ON)_Typ(@VGS=4.5V 5.5 mW Applications Load Switch PW

 8.58. Size:410K  jiejie micro
 jmsl0606agq.pdf

JMSL0606AGQ 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.0 m RDS(ON)_Typ (@ VGS = 4.5V) 5.2 m Halogen-free and RoHS-compliant AEC-Q101 Q

 8.59. Size:296K  jiejie micro
 jmsl0612ak.pdf

JMSL0612AK 60V 9.9m N-Ch Power MOSFET Product Summary Features Parameter Low RDS(ON) Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.9 m RDS(ON)_Typ (@ VGS = 4.5V) 12.6 m Halogen-free and RoHS-compliant Applications Power Mana

 8.60. Size:379K  jiejie micro
 jmsl0601bgq.pdf

JMSL0601BGQ 60V 1.25m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.25 m RDS(ON)_Typ (@ VGS = 4.5V) 1.8 m Halogen-free and RoHS-compliant AEC-Q1

 8.61. Size:325K  jiejie micro
 jmsl0606ag.pdf

JMSL0606AG 60V 4.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V) 4.0 m Pb-free Lead Plating RDS(ON) _Typ(@ VGS = 4.5V) 5.2 m Halogen-free and RoHS-compliant Applications Power

 8.62. Size:327K  jiejie micro
 jmsl0606ak.pdf

JMSL0606AK 60V 4.6m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 4.6 m RDS(ON) (@ VGS = 4.5V) 6.0 m Halogen-free and RoHS-compliant Applications Power Management in

 8.63. Size:1271K  jiejie micro
 jmsl0611pg.pdf

60V, 69A, 12.3m N-channel Power SGT MOSFET JMSL0611PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 69 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW

 8.64. Size:307K  jiejie micro
 jmsl0612au.pdf

JMSL0612AU 60V 10.0m N-Ch Power MOSFET Features Product Summary Low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 12.3 m Applications Power Mana

 8.65. Size:318K  jiejie micro
 jmsl0620agde.pdf

JMSL0620AGDE 60V 18m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 18.0 m RDS(ON)_Typ (@ VGS = 4.5V) 25 m Pb-free Lead Platin

 8.66. Size:311K  jiejie micro
 jmsl0605agd.pdf

JMSL0605AGD 60V 4.4m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) 4.4 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 5.6 m Halogen-free and RoHS-compliant Applicatio

 8.67. Size:380K  jiejie micro
 jmsl0602agq.pdf

JMSL0602AGQ 60V 1.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 172 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 m RDS(ON)_Typ (@ VGS = 4.5V) 2.4 m Halogen-free and RoHS-compliant AEC-Q101

 8.68. Size:1254K  jiejie micro
 jmsl0612pk.pdf

60V, 51A, 9.3m N-channel Power SGT MOSFET JMSL0612PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 51 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.8 mW RDS(ON)_Typ(@VGS=4.5V 9.3 mW Applications Load Switch PWM

 8.69. Size:329K  jiejie micro
 jmsl0604agq.pdf

JMSL0604AGQ 60V 3.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ(@ VGS = 10V) Pb-free Lead Plating 3.6 m RDS(ON) _Typ(@ VGS = 4.5V) 4.7 m Halogen-free and RoHS-compliant AEC-Q101

 8.70. Size:306K  jiejie micro
 jmsl0604ag.pdf

JMSL0604AG 60V 3.9m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ(@ VGS = 10V) 3.9 m RDS(ON) _Typ(@ VGS = 4.5V) 5.0 m Halogen-free and RoHS-compliant Applications Power Ma

 8.71. Size:1257K  jiejie micro
 jmsl0608pu.pdf

60V, 47A, 8.2m N-channel Power Trench MOSFET JMSL0608PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 47 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.3 mW RDS(ON)_Typ(@VGS=4.5V 8.2 mW Applications Load Switch P

 8.72. Size:310K  jiejie micro
 jmsl0613apd.pdf

JMSL0613APD 60V 10.5m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10.2 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 10.5 m RDS(ON)_Typ (@ VGS = 4.5V) 12.5 m Halogen-free and RoHS-compliant Applications P

 8.73. Size:349K  jiejie micro
 jmsl0609ak.pdf

JMSL0609AK 60V 7.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m Halogen-free and RoHS-compliant Applications Power Managerme

 8.74. Size:308K  jiejie micro
 jmsl0612auq.pdf

JMSL0612AUQ 60V 10.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 36 A RDS(ON)_Typ (@ VGS = 10V) 10.0 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V) 12.3 m Halogen-free and RoHS-compliant AEC-Q101 Qua

 8.75. Size:328K  jiejie micro
 jmsl0609apd.pdf

JMSL0609APD 60V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Ultra-low RDS(ON) Value Unit VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 9.5 m Applications Power Mana

 8.76. Size:331K  jiejie micro
 jmsl0609agwq.pdf

JMSL0609AGWQ 60V 7.2m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V) 7.2 m Automated Optical Inspection (AOI) RDS(ON)_Typ (@ VGS

 8.77. Size:330K  jiejie micro
 jmsl0606agwq.pdf

JMSL0606AGWQ 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V) 4.0 m RDS(ON)_Typ (@ VGS = 4.5V) 5.2 m Automated Optica

 8.78. Size:321K  jiejie micro
 jmsl0606ac jmsl0606ae.pdf

JMSL0606AC JMSL0606AE 60V 5.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 115 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m RDS(ON)_Typ (@ VGS = 4.5V) 7.0 m Halogen-free and RoHS-compliant Applications

 8.79. Size:331K  jiejie micro
 jmsl0615ap.pdf

JMSL0615AP 60V 10m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.7 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10 m RDS(ON)_Typ (@ VGS = 4.5V) 13 m Halogen-free and RoHS-compliant Applications Power Manageme

 8.80. Size:1307K  jiejie micro
 jmsl0611pgd.pdf

60V, 31A, 13.7m Dual N-channel Power SGT MOSFET JMSL0611PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 31 A RDS(ON)_Typ(@VGS=10V 10.7 mW Applications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application

 8.81. Size:1192K  jiejie micro
 jmsl0602mg.pdf

60V, 257A, 1.3m N-channel Power SGT MOSFET JMSL0602MG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.4 V Halogen-free; RoHS-compliant ID(@VGS=10V) 257 A RDS(ON)_Typ(@VGS=10V 1.0 mW RDS(ON)_Typ(@VGS=4.5V 1.3 mW Applications Load Switch PWM Application Po