JMSL0630AG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JMSL0630AG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 92 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для JMSL0630AG
JMSL0630AG Datasheet (PDF)
jmsl0630ag.pdf

JMSL0630AG60V 22m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 25 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V)28 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom.,
jmsl0630agd.pdf

JMSL0630AGD60V 22m Dual N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 23 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V)28 m Halogen-free and RoHS-compliantApplications Power Managerment in
jmsl0630au.pdf

JMSL0630AU60V 22m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 20 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V)30 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom.,
jmsl0606ag.pdf

JMSL0606AG60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V)5.2 mApplications Power Managerment in Telecom., Industrial
jmsl0609ap.pdf

JMSL0609AP60V 7.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 13.6 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.5 m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliantApplications Power Manag
jmsl0601bg.pdf

JMSL0601BG60V 1.25m N-Ch Power MOSFETFeaturesProduct Summary Low RDS(ON)Parameter Value Unit Low Gate Charge VDS60 V VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 226 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.25 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)1.8 mApplications Power Mana
jmsl0606akq.pdf

JMSL0606AKQ60V 4.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 93 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.6 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101 Qu
jmsl0610agdq.pdf

JMSL0610AGDQ60V 8.5m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 38 A RDS(ON)_Typ (@ VGS = 10V)8.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)10.2 m Halogen-free and RoHS-compliant AE
jmsl0601ag.pdf

JMSL0601AG60V 0.90m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 275 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliantApplications Power Mana
jmsl0612pp.pdf

60V, 11A, 11.4 m N-channel Power SGT MOSFETJMSL0612PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 8.0 mWRDS(ON)_Typ(@VGS=4.5V 11.4 mWApplications Load Switch P
jmsl0615agdq.pdf

JMSL0615AGDQ60V 10.5m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 33 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.5 m RDS(ON)_Typ (@ VGS = 4.5V)13.5 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0602ag.pdf

JMSL0602AG60V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.4 m Halogen-free and RoHS-compliantApplications Power Manage
jmsl0620agdeq.pdf

JMSL0620AGDEQ60V 18m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)18.0 m RDS(ON)_Typ (@ VGS = 4.5V)25 m Pb-free Lead Plati
jmsl0615av.pdf

JMSL0615AV60V 9.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 21 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 9.8 m RDS(ON)_Typ (@ VGS = 4.5V)12.5 m Halogen-free and RoHS-compliantApplications Power Manag
jmsl0609ppd.pdf

60V, 11A, 11.7m N-channel Power SGT MOSFETJMSL0609PPDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.5 mWRDS(ON)_Typ(@VGS=4.5V 11.7 mWApplications Load Switch P
jmsl0608pg.pdf

60V, 79A, 8m N-channel Power SGT MOSFETJMSL0608PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 79 ARDS(ON)_Typ(@VGS=10V 6.2 mWRDS(ON)_Typ(@VGS=4.5V 8.0 mWApplications Load Switch PWM Application Power
jmsl0612pu.pdf

60V, 40A, 10.6m N-channel Power SGT MOSFETJMSL0612PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 40 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.6 mWApplications Load Switch PW
jmsl0610agd.pdf

JMSL0610AGD60V 8.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 35 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.5 m RDS(ON)_Typ (@ VGS = 4.5V)10.2 m Halogen-free and RoHS-compliantApplications Powe
jmsl0606pe.pdf

60V, 117A, 5.3m N-channel Power SGT MOSFETJMSL0606PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 117 ARDS(ON)_Typ(@VGS=10V 4.2 mWRDS(ON)_Typ(@VGS=4.5V 5.3 mWApplications Load Switch PWM Application Po
jmsl0606pu.pdf

JMSL0606PU60V 3.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 69 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.9 m RDS(ON)_Typ (@ VGS = 4.5V)5.1 m Halogen-free and RoHS-compliantApplications Power Man
jmsl0606auq.pdf

JMSL0606AUQ60V 5.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.0 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0612agq.pdf

JMSL0612AGQ60V 9.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
jmsl0606au.pdf

JMSL0606AU60V 5.0mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 5.0 mW RDS(ON) (@ VGS = 4.5V)6.6 mW Halogen-free and RoHS-compliantApplications Power Management in Compu
jmsl0609auq.pdf

JMSL0609AUQ60V 7.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 44 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.5 m RDS(ON)_Typ (@ VGS = 4.5V)9.4 m Halogen-free and RoHS-compliant AEC-Q101 Qu
jmsl0608pk.pdf

60V, 53A, 8.7m N-channel Power SGT MOSFETJMSL0608PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 53 ARDS(ON)_Typ(@VGS=10V 6.8 mWApplications RDS(ON)_Typ(@VGS=4.5V 8.7 mW Load Switch PWM Application Power
jmsl0608pgd.pdf

60V, 37A, 11m Dual N-channel Power SGT MOSFETJMSL0608PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 37 ARDS(ON)_Typ(@VGS=10V 8 mWApplications RDS(ON)_Typ(@VGS=4.5V 11 mW Load Switch PWM Application Pow
jmsl0620age.pdf

JMSL0620AGE60V 16m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 31 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)16.0 m RDS(ON)_Typ (@ VGS = 4.5V)23 m Pb-free Lead Plating, Hal
jmsl0601agq.pdf

JMSL0601AGQ60V 0.90m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 315 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0612akq.pdf

JMSL0612AKQ60V 9.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 57 A RDS(ON) (@ VGS = 10V)9.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli
jmsl0605agdq.pdf

JMSL0605AGDQ60V 4.4m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 61 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.4 m RDS(ON)_Typ (@ VGS = 4.5V)5.6 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0603bgq.pdf

JMSL0603BGQ60V 2.4m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 147 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.4 m RDS(ON)_Typ (@ VGS = 4.5V)3.4 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0615agd.pdf

JMSL0615AGD60V 10.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 31 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.5 m RDS(ON)_Typ (@ VGS = 4.5V)13.5 m Halogen-free and RoHS-compliantApplications Power M
jmsl0606ap.pdf

JMSL0606AP60V 5.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 15 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.3 m RDS(ON)_Typ (@ VGS = 4.5V)6.7 m Halogen-free and RoHS-compliantApplications Power
jmsl0612pg.pdf

60V, 67A, 10.5m N-channel Power SGT MOSFETJMSL0612PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 VID(@VGS=10V) 67 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications Load Switch PWM Application Pow
jmsl0620ageq.pdf

JMSL0620AGEQ60V 16m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 32 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)16.0 m RDS(ON)_Typ (@ VGS = 4.5V)23 m Pb-free Lead Plating, Ha
jmsl06120uq.pdf

60V, 42A, 10.9m N-channel Power SGT MOSFETJMSL06120UQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.0 V 100% Vds TestedID(@VGS=10V) 42 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.3 mRDS(ON)_Typ(@VGS=4.5V 10.9 m AEC-Q101 QualifiedApplications
jmsl0602pg.pdf

60V, 209A, 2.1m N-channel Power SGT MOSFETJMSL0602PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 209 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.7 mWRDS(ON)_Typ(@VGS=4.5V 2.1 mWApplications Load Switch PW
jmsl0612pgq.pdf

60V, 72A, 10.5m N-channel Power SGT MOSFETJMSL0612PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 72 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications
jmsl0620aue.pdf

JMSL0620AUE60V 16mN-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 24 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)16.0 m RDS(ON)_Typ (@ VGS = 4.5V)23 m Pb-free Lead Plating
jmsl0611pud.pdf

60V, 34A, 14.6m Dual N-channel Power SGT MOSFETJMSL0611PUDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 11.3 mWRDS(ON)_Typ(@VGS=4.5V 14.6 mWApplications Load Switch
jmsl0615pgdq.pdf

60V, 37A, 12.1m Dual N-channel Power SGT MOSFETJMSL0615PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 37 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 8.3 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 12.1 mWApplication
jmsl0609akq.pdf

JMSL0609AKQ60V 7.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V)7.4 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Auto
jmsl0603ak.pdf

JMSL0603AK60V 2.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.6 m RDS(ON)_Typ (@ VGS = 4.5V)3.3 Halogen-free and RoHS-compliant mApplications Power M
jmsl0608pp.pdf

60V, 14A, 9.4m N-channel Power SGT MOSFETJMSL0608PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 14 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.9 mWRDS(ON)_Typ(@VGS=4.5V 9.4 mWApplications Load Switch PWM
jmsl0603pg.pdf

60V, 154A, 2.7m N-channel Power SGT MOSFETJMSL0603PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 154 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.1 mWRDS(ON)_Typ(@VGS=4.5V 2.7 mWApplications Load Switch PW
jmsl0606pg.pdf

JMSL0606PG60V 3.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m RDS(ON)_Typ (@ VGS = 4.5V)4.5 m Halogen-free and RoHS-compliantApplications Power Ma
jmsl0612ag.pdf

JMSL0612AG60V 9.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 34 A RDS(ON)_Typ (@ VGS = 10V)9.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliantApplications Power Mana
jmsl0609ag.pdf

JMSL0609AG60V 7.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 43 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 m RDS(ON)_Typ (@ VGS = 4.5V)9.0 m Halogen-free and RoHS-compliantApplications Power Managem
jmsl0615aud.pdf

JMSL0615AUD60V 11.0m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 24 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)11.0 m RDS(ON)_Typ (@ VGS = 4.5V)14.0 m Halogen-free and RoHS-compliantApplications Powe
jmsl0609agq.pdf

JMSL0609AGQ60V 7.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 m RDS(ON)_Typ (@ VGS = 4.5V)9.0 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0601tg.pdf

60V, 294A, 1.1m N-channel Power SGT MOSFETJMSL0601TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.3 V Halogen-free; RoHS-compliantID(@VGS=10V) 294 ARDS(ON)_Typ(@VGS=10V 0.9 mWRDS(ON)_Typ(@VGS=4.5V 1.1 mWApplications Load Switch PWM Application Pow
jmsl0609au.pdf

JMSL0609AU60V 7.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 41 A RDS(ON)_Typ (@ VGS = 10V)7.5 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)9.4 m Halogen-free and RoHS-compliantApplications Power
jmsl0615apd.pdf

JMSL0615APD60V 12m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 9.7 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 12 m RDS(ON)_Typ (@ VGS = 4.5V)15 m Halogen-free and RoHS-compliantApplications Power Ma
jmsl0611pu.pdf

60V, 34A, 12.2m N-channel Power SGT MOSFETJMSL0611PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.0 mWRDS(ON)_Typ(@VGS=4.5V 12.2 mWApplications Load Switch PW
jmsl060spgq.pdf

60V, 283A, 1.4m N-channel Power SGT MOSFETJMSL060SPGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 283 ARDS(ON)_Typ(@VGS=10V 1.0 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 1.4 m AEC-Q101 QualifiedApplications
jmsl0603bg.pdf

JMSL0603BG60V 2.4m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 142 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.4 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)3.4 mApplications
jmsl0611pp.pdf

60V, 10A, 12.3m N-channel Power SGT MOSFETJMSL0611PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 10 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.1 mWRDS(ON)_Typ(@VGS=4.5V 12.3 mWApplications Load Switch PW
jmsl0606agd.pdf

JMSL0606AGD60V 6.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 55 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.4 m RDS(ON) (@ VGS = 4.5V)7.6 m Halogen-free and RoHS-compliantApplications Power Managerment
jmsl0612ppd.pdf

60V, 9.3A, 13.8m N-channel Dual Power SGT MOSFETJMSL0612PPDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 9.3 A Pb-free platingRDS(ON)_Typ(@VGS=10V 10.3 mWRDS(ON)_Typ(@VGS=4.5V 13.8 mWApplications Load Switc
jmsl0605pg.pdf

60V, 100A, 5.5m N-channel Power SGT MOSFETJMSL0605PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.9 mWRDS(ON)_Typ(@VGS=4.5V 5.5 mWApplications Load Switch PW
jmsl0606agq.pdf

JMSL0606AGQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Q
jmsl0612ak.pdf

JMSL0612AK60V 9.9m N-Ch Power MOSFETProduct SummaryFeaturesParameter Low RDS(ON) Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.9 m RDS(ON)_Typ (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliantApplications Power Mana
jmsl0601bgq.pdf

JMSL0601BGQ60V 1.25m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.25 m RDS(ON)_Typ (@ VGS = 4.5V)1.8 m Halogen-free and RoHS-compliant AEC-Q1
jmsl0606ag.pdf

JMSL0606AG60V 4.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m Pb-free Lead Plating RDS(ON) _Typ(@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliantApplications Power
jmsl0606ak.pdf

JMSL0606AK60V 4.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)4.6 m RDS(ON) (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliantApplications Power Management in
jmsl0611pg.pdf

60V, 69A, 12.3m N-channel Power SGT MOSFETJMSL0611PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 69 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.1 mWRDS(ON)_Typ(@VGS=4.5V 12.3 mWApplications Load Switch PW
jmsl0612au.pdf

JMSL0612AU60V 10.0m N-Ch Power MOSFETFeaturesProduct Summary Low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 12.3 mApplications Power Mana
jmsl0620agde.pdf

JMSL0620AGDE60V 18m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)18.0 m RDS(ON)_Typ (@ VGS = 4.5V)25 m Pb-free Lead Platin
jmsl0605agd.pdf

JMSL0605AGD60V 4.4m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V)4.4 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)5.6 m Halogen-free and RoHS-compliantApplicatio
jmsl0602agq.pdf

JMSL0602AGQ60V 1.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 172 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.4 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0612pk.pdf

60V, 51A, 9.3m N-channel Power SGT MOSFETJMSL0612PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 51 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 mWApplications Load Switch PWM
jmsl0604agq.pdf

JMSL0604AGQ60V 3.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ(@ VGS = 10V) Pb-free Lead Plating 3.6 m RDS(ON) _Typ(@ VGS = 4.5V)4.7 m Halogen-free and RoHS-compliant AEC-Q101
jmsl0604ag.pdf

JMSL0604AG60V 3.9m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ(@ VGS = 10V)3.9 m RDS(ON) _Typ(@ VGS = 4.5V)5.0 m Halogen-free and RoHS-compliantApplications Power Ma
jmsl0608pu.pdf

60V, 47A, 8.2m N-channel Power Trench MOSFETJMSL0608PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 47 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.3 mWRDS(ON)_Typ(@VGS=4.5V 8.2 mWApplications Load Switch P
jmsl0613apd.pdf

JMSL0613APD60V 10.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10.2 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 10.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.5 m Halogen-free and RoHS-compliantApplications P
jmsl0609ak.pdf

JMSL0609AK60V 7.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliantApplications Power Managerme
jmsl0612auq.pdf

JMSL0612AUQ60V 10.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 36 A RDS(ON)_Typ (@ VGS = 10V)10.0 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)12.3 m Halogen-free and RoHS-compliant AEC-Q101 Qua
jmsl0609apd.pdf

JMSL0609APD60V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Ultra-low RDS(ON) Value Unit VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 9.5 mApplications Power Mana
jmsl0609agwq.pdf

JMSL0609AGWQ60V 7.2m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V)7.2 mAutomated Optical Inspection (AOI) RDS(ON)_Typ (@ VGS
jmsl0606agwq.pdf

JMSL0606AGWQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 mAutomated Optica
jmsl0606ac jmsl0606ae.pdf

JMSL0606ACJMSL0606AE60V 5.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 115 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m RDS(ON)_Typ (@ VGS = 4.5V)7.0 m Halogen-free and RoHS-compliantApplications
jmsl0615ap.pdf

JMSL0615AP60V 10m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.7 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10 m RDS(ON)_Typ (@ VGS = 4.5V)13 m Halogen-free and RoHS-compliantApplications Power Manageme
jmsl0611pgd.pdf

60V, 31A, 13.7m Dual N-channel Power SGT MOSFETJMSL0611PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 31 ARDS(ON)_Typ(@VGS=10V 10.7 mWApplications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application
jmsl0602mg.pdf

60V, 257A, 1.3m N-channel Power SGT MOSFETJMSL0602MGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 257 ARDS(ON)_Typ(@VGS=10V 1.0 mWRDS(ON)_Typ(@VGS=4.5V 1.3 mWApplications Load Switch PWM Application Po
Другие MOSFET... JMSL0615AUD , JMSL0615AV , JMSL0615PGDQ , JMSL0620AGDE , JMSL0620AGDEQ , JMSL0620AGE , JMSL0620AGEQ , JMSL0620AUE , STP65NF06 , JMSL0630AGD , JMSL0630AU , JMSL0803MG , , , , , .



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