ZXMN2F34MA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN2F34MA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 277 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: DFN322

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ZXMN2F34MA datasheet

 ..1. Size:407K  diodes
 zxmn2f34ma.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low

 0.1. Size:404K  zetex
 zxmn2f34mata.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low

 6.1. Size:407K  diodes
 zxmn2f34fh.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC-

 6.2. Size:106K  tysemi
 zxmn2f34fh.pdf pdf_icon

ZXMN2F34MA

Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S

MOSTRAR MÁS

Otros transistores... ZXMN2A04DN8, ZXMN2A14F, ZXMN2AMC, ZXMN2B01F, ZXMN2B03E6, ZXMN2B14FH, ZXMN2F30FH, ZXMN2F34FH, 2SK3878, DMG4466SSS, DMG4466SSSL, DMG4468LFG, DMG4468LK3, DMG4496SSS, DMG4800LFG, DMG4800LK3, DMG4800LSD