ZXMN2F34MA Todos los transistores

 

ZXMN2F34MA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN2F34MA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 277 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: DFN322
 

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ZXMN2F34MA Datasheet (PDF)

 ..1. Size:407K  diodes
 zxmn2f34ma.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low

 0.1. Size:404K  zetex
 zxmn2f34mata.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low

 6.1. Size:407K  diodes
 zxmn2f34fh.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC-

 6.2. Size:106K  tysemi
 zxmn2f34fh.pdf pdf_icon

ZXMN2F34MA

Product specificationZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS

MOSTRAR MÁS

Otros transistores... ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 , ZXMN2B14FH , ZXMN2F30FH , ZXMN2F34FH , IRFP260 , DMG4466SSS , DMG4466SSSL , DMG4468LFG , DMG4468LK3 , DMG4496SSS , DMG4800LFG , DMG4800LK3 , DMG4800LSD .

History: IRF7534D1 | 1N60L-T60-K | DH045N04I | SSM3K335R | KU310N10F | BSC060P03NS3EG | APT47N60BCFG

 

 
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