All MOSFET. ZXMN2F34MA Datasheet

 

ZXMN2F34MA Datasheet and Replacement


   Type Designator: ZXMN2F34MA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Cossⓘ - Output Capacitance: 277 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: DFN322
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ZXMN2F34MA Datasheet (PDF)

 ..1. Size:407K  diodes
 zxmn2f34ma.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low

 0.1. Size:404K  zetex
 zxmn2f34mata.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low

 6.1. Size:407K  diodes
 zxmn2f34fh.pdf pdf_icon

ZXMN2F34MA

ZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC-

 6.2. Size:106K  tysemi
 zxmn2f34fh.pdf pdf_icon

ZXMN2F34MA

Product specificationZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS

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Keywords - ZXMN2F34MA MOSFET datasheet

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