SLF70R380E7C Todos los transistores

 

SLF70R380E7C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLF70R380E7C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 155 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de SLF70R380E7C MOSFET

   - Selección ⓘ de transistores por parámetros

 

SLF70R380E7C Datasheet (PDF)

 ..1. Size:2508K  maple semi
 slf70r380e7c.pdf pdf_icon

SLF70R380E7C

SLF70R380E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 700V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 8.1. Size:495K  maple semi
 slp70r600s2 slf70r600s2.pdf pdf_icon

SLF70R380E7C

SLP70R600S2/SLF70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 8.2. Size:737K  maple semi
 slp70r420s2 slf70r420s2.pdf pdf_icon

SLF70R380E7C

SLP70R420S2/SLF70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc

 8.3. Size:2512K  maple semi
 slf70r280e7c.pdf pdf_icon

SLF70R380E7C

SLF70R280E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A*, 700V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

MOSTRAR MÁS

Otros transistores... STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C , SLF70R280E7C , IRFZ44N , SLF80R830GT , SLF8N65SV , , , , , , .

 

 
Back to Top

 


 
.