All MOSFET. SLF70R380E7C Datasheet

 

SLF70R380E7C Datasheet and Replacement


   Type Designator: SLF70R380E7C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220F
 

 SLF70R380E7C substitution

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SLF70R380E7C Datasheet (PDF)

 ..1. Size:2508K  maple semi
 slf70r380e7c.pdf pdf_icon

SLF70R380E7C

SLF70R380E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 700V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 8.1. Size:495K  maple semi
 slp70r600s2 slf70r600s2.pdf pdf_icon

SLF70R380E7C

SLP70R600S2/SLF70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 8.2. Size:737K  maple semi
 slp70r420s2 slf70r420s2.pdf pdf_icon

SLF70R380E7C

SLP70R420S2/SLF70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc

 8.3. Size:2512K  maple semi
 slf70r280e7c.pdf pdf_icon

SLF70R380E7C

SLF70R280E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A*, 700V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

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Datasheet: STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C , SLF70R280E7C , IRFZ44N , SLF80R830GT , SLF8N65SV , , , , , , .

Keywords - SLF70R380E7C MOSFET datasheet

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