SLF70R380E7C - описание и поиск аналогов

SLF70R380E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 700V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

SLP70R600S2/SLF70R600S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 700V, RDS(on)typ= 0.52 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 18nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

SLP70R420S2/SLF70R420S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 700V, RDS(on)typ= 0.37 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 24nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switc

SLF70R280E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A*, 700V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

SLD70R900S2 / SLF70R900S2 700V N-Channel Power MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 700V, RDS(on) typ. = 0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Extended Safe Operating Area This advanced technology has been especially tailored to - Ease of Paralleling minimize on-state resistance, provide superior switching - Fas