MDT40P10D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MDT40P10D datasheet

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Silicon P-Channel Power MOSFET Description The MDT40P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS= -100V, ID=-40A Low ON Resistance Low Reverse transfer capacitances Schematic diagram 100% Single Pulse avalanche energy Test Application Power switching application

9.1. Size:928K cn minos
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100V N-Channel Power MOSFET DESCRIPTION The MDT40N10D uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 40A R

9.2. Size:1035K cn minos
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60V N-Channel Power MOSFE Description The MDT60N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R

Otros transistores... MPG150N10P , MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , AON7506 , MDT80N06D , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 .