All MOSFET. MDT40P10D Datasheet

 

MDT40P10D Datasheet and Replacement


   Type Designator: MDT40P10D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252
 

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MDT40P10D Datasheet (PDF)

 ..1. Size:250K  cn minos
 mdt40p10d.pdf pdf_icon

MDT40P10D

Silicon P-Channel Power MOSFETDescriptionThe MDT40P10D uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS= -100V, ID=-40A Low ON Resistance Low Reverse transfer capacitancesSchematic diagram 100% Single Pulse avalanche energy TestApplication Power switching application

 9.1. Size:928K  cn minos
 mdt40n10d.pdf pdf_icon

MDT40P10D

100V N-Channel Power MOSFETDESCRIPTIONThe MDT40N10D uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 40A R

 9.2. Size:1035K  cn minos
 mdt40n06d.pdf pdf_icon

MDT40P10D

60V N-Channel Power MOSFEDescriptionThe MDT60N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R

Datasheet: MPG150N10P , MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , 2N7002 , MDT80N06D , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 .

History: BSS159N | SM6127NSK | TPHR9003NL | RU40S4H | 2SK3985-01 | SI12N60

Keywords - MDT40P10D MOSFET datasheet

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