MDT40P10D MOSFET Datasheet: P-Ch, 100V, 40A. Full specification with pinout and replacement list

MDT40P10D Specs and Replacement

Type Designator: MDT40P10D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO252

MDT40P10D substitution

- MOSFET ⓘ Cross-Reference Search

MDT40P10D datasheet

..1. Size:250K cn minos
mdt40p10d.pdf pdf_icon

Silicon P-Channel Power MOSFET Description The MDT40P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS= -100V, ID=-40A Low ON Resistance Low Reverse transfer capacitances Schematic diagram 100% Single Pulse avalanche energy Test Application Power switching application ... See More ⇒

9.1. Size:928K cn minos
mdt40n10d.pdf pdf_icon

100V N-Channel Power MOSFET DESCRIPTION The MDT40N10D uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 40A R ... See More ⇒

9.2. Size:1035K cn minos
mdt40n06d.pdf pdf_icon

60V N-Channel Power MOSFE Description The MDT60N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R ... See More ⇒

Detailed specifications: MPG150N10P, MPG150N10S, MPT035N08P, MPT035N08S, FTP06N06N, MD40N50, MD50N50, MDT35P10D, AON7506, MDT80N06D, MP13N50, MP5N50, MPF4N65, MPF7N65, MPG100N03P, MPG100N06, MDT100N06