MDT80N06D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MDT80N06D datasheet

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mpg80n06p mdt80n06d.pdf pdf_icon

60V N-Channel Power MOSFET DESCRIPTION The MPG80N06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 60V,I = 80A DS D R

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mdt80n06d.pdf pdf_icon

60V N-Channel Power MOSFET DESCRIPTION The MDT80N06D uses advanced trench technology to provide excellent R , low gate charge. It can be used in a DS(ON) wide variety of applications. KEY CHARACTERISTICS V = 60V,I = 80A DS D R

9.1. Size:116K utc
mmdt8050s.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA

Otros transistores... MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , MDT40P10D , STP80NF70 , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 .