MDT80N06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDT80N06D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 107 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MDT80N06D MOSFET
MDT80N06D Datasheet (PDF)
mpg80n06p mdt80n06d.pdf
60V N-Channel Power MOSFETDESCRIPTIONThe MPG80N06 uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 60V,I = 80ADS DR
mdt80n06d.pdf
60V N-Channel Power MOSFETDESCRIPTIONThe MDT80N06D uses advanced trench technology toprovide excellent R , low gate charge. It can be used in aDS(ON)wide variety of applications.KEY CHARACTERISTICS V = 60V,I = 80ADS DR
mmdt8050s.pdf
UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA
Otros transistores... MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , MDT40P10D , STP80NF70 , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 .
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