MDT80N06D MOSFET Datasheet: N-Ch, 60V, 80A. Full specification with pinout and replacement list

MDT80N06D Specs and Replacement

Type Designator: MDT80N06D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

MDT80N06D substitution

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MDT80N06D datasheet

..1. Size:544K cn minos
mpg80n06p mdt80n06d.pdf pdf_icon

60V N-Channel Power MOSFET DESCRIPTION The MPG80N06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 60V,I = 80A DS D R ... See More ⇒

..2. Size:511K cn minos
mdt80n06d.pdf pdf_icon

60V N-Channel Power MOSFET DESCRIPTION The MDT80N06D uses advanced trench technology to provide excellent R , low gate charge. It can be used in a DS(ON) wide variety of applications. KEY CHARACTERISTICS V = 60V,I = 80A DS D R ... See More ⇒

9.1. Size:116K utc
mmdt8050s.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA ... See More ⇒

Detailed specifications: MPG150N10S, MPT035N08P, MPT035N08S, FTP06N06N, MD40N50, MD50N50, MDT35P10D, MDT40P10D, STP80NF70, MP13N50, MP5N50, MPF4N65, MPF7N65, MPG100N03P, MPG100N06, MDT100N06, MPS100N06