All MOSFET. MDT80N06D Datasheet

 

MDT80N06D Datasheet and Replacement


   Type Designator: MDT80N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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MDT80N06D Datasheet (PDF)

 ..1. Size:544K  cn minos
 mpg80n06p mdt80n06d.pdf pdf_icon

MDT80N06D

60V N-Channel Power MOSFETDESCRIPTIONThe MPG80N06 uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 60V,I = 80ADS DR

 ..2. Size:511K  cn minos
 mdt80n06d.pdf pdf_icon

MDT80N06D

60V N-Channel Power MOSFETDESCRIPTIONThe MDT80N06D uses advanced trench technology toprovide excellent R , low gate charge. It can be used in aDS(ON)wide variety of applications.KEY CHARACTERISTICS V = 60V,I = 80ADS DR

 9.1. Size:116K  utc
 mmdt8050s.pdf pdf_icon

MDT80N06D

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA

Datasheet: MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , MDT40P10D , 18N50 , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 .

History: ELM34802AA-N | TPHR9003NL | SSF3637S | ISCNH346F | SDF20N60JEB | 2SK3985-01 | RU40S4H

Keywords - MDT80N06D MOSFET datasheet

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