IRLR024NTR Todos los transistores

 

IRLR024NTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR024NTR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.4 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO252
 

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IRLR024NTR Datasheet (PDF)

 ..1. Size:962K  cn minos
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IRLR024NTR

60V N-Channel Power MOSFETDESCRIPTIONThe IRLR024NTR uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can beused in a wide variety of applications.KEY CHARACTERISTICS VDS = 60V,ID= 30ASchematic diagramRDS(ON)

 0.1. Size:312K  international rectifier
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IRLR024NTR

PD- 96348AUTOMOTIVE GRADEAUIRLR024NAUIRLU024NFeatures Advanced Planar TechnologyHEXFET Power MOSFET Low On-ResistanceD Logic-Level Gate DriveV(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.065 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

 6.1. Size:490K  international rectifier
auirlr024n auirlu024n.pdf pdf_icon

IRLR024NTR

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 6.2. Size:308K  international rectifier
irlr024npbf irlu024npbf.pdf pdf_icon

IRLR024NTR

PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni

Otros transistores... MPT042N10S , MPT045N08P , MPT045N08S , MPT65N08 , MPT65N08S , P80NF70 , AO3400S , AO3401S , IRF1405 , K3878 , MD20N60 , MD20N65 , MD23N50 , MD33N25 , MD40N25 , MD9N90 , MDP18N20 .

History: K3878 | MD20N60

 

 
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