IRLR024NTR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR024NTR  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.4 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO252

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IRLR024NTR datasheet

 ..1. Size:962K  cn minos
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IRLR024NTR

60V N-Channel Power MOSFET DESCRIPTION The IRLR024NTR uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A Schematic diagram RDS(ON)

 0.1. Size:312K  international rectifier
 auirlr024ntr.pdf pdf_icon

IRLR024NTR

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

 6.1. Size:490K  international rectifier
 auirlr024n auirlu024n.pdf pdf_icon

IRLR024NTR

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 6.2. Size:308K  international rectifier
 irlr024npbf irlu024npbf.pdf pdf_icon

IRLR024NTR

PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065 G l Fast Switching l Fully Avalanche Rated ID = 17A S l Lead-Free Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni

MOSTRAR MÁS

Otros transistores... MPT042N10S, MPT045N08P, MPT045N08S, MPT65N08, MPT65N08S, P80NF70, AO3400S, AO3401S, STP65NF06, K3878, MD20N60, MD20N65, MD23N50, MD33N25, MD40N25, MD9N90, MDP18N20