IRLR024NTR Datasheet. Specs and Replacement

Type Designator: IRLR024NTR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.4 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO252

IRLR024NTR substitution

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IRLR024NTR datasheet

 ..1. Size:962K  cn minos
 irlr024ntr.pdf pdf_icon

IRLR024NTR

60V N-Channel Power MOSFET DESCRIPTION The IRLR024NTR uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A Schematic diagram RDS(ON) ... See More ⇒

 0.1. Size:312K  international rectifier
 auirlr024ntr.pdf pdf_icon

IRLR024NTR

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual... See More ⇒

 6.1. Size:490K  international rectifier
 auirlr024n auirlu024n.pdf pdf_icon

IRLR024NTR

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com... See More ⇒

 6.2. Size:308K  international rectifier
 irlr024npbf irlu024npbf.pdf pdf_icon

IRLR024NTR

PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065 G l Fast Switching l Fully Avalanche Rated ID = 17A S l Lead-Free Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni... See More ⇒

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Detailed specifications: MPT042N10S, MPT045N08P, MPT045N08S, MPT65N08, MPT65N08S, P80NF70, AO3400S, AO3401S, STP65NF06, K3878, MD20N60, MD20N65, MD23N50, MD33N25, MD40N25, MD9N90, MDP18N20

Keywords - IRLR024NTR MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.