K3878 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

K3878 Datasheet (PDF)

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Silicon N-Channel Power MOSFETDescriptionThe K3878 uses advanced technology and design toprovide excellent R . It can be used in a wide variety ofDS(ON)applications.General Features V =900V, R

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2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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isc N-Channel Mosfet Transistor 2SK3878FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a

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