K3878 Datasheet. Specs and Replacement

Type Designator: K3878  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 350 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO3P

K3878 substitution

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K3878 datasheet

 ..1. Size:809K  cn minos
 k3878.pdf pdf_icon

K3878

Silicon N-Channel Power MOSFET Description The K3878 uses advanced technology and design to provide excellent R . It can be used in a wide variety of DS(ON) applications. General Features V =900V, R ... See More ⇒

 0.1. Size:227K  toshiba
 2sk3878.pdf pdf_icon

K3878

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( - MOSIV) 2SK3878 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

 0.2. Size:216K  inchange semiconductor
 2sk3878.pdf pdf_icon

K3878

isc N-Channel Mosfet Transistor 2SK3878 FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) Avalanche Energy Specified Fast Switching Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for a... See More ⇒

Detailed specifications: MPT045N08P, MPT045N08S, MPT65N08, MPT65N08S, P80NF70, AO3400S, AO3401S, IRLR024NTR, IRF1405, MD20N60, MD20N65, MD23N50, MD33N25, MD40N25, MD9N90, MDP18N20, MDP2N60

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