All MOSFET. K3878 Datasheet

 

K3878 Datasheet and Replacement


   Type Designator: K3878
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO3P
 

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K3878 Datasheet (PDF)

 ..1. Size:809K  cn minos
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K3878

Silicon N-Channel Power MOSFETDescriptionThe K3878 uses advanced technology and design toprovide excellent R . It can be used in a wide variety ofDS(ON)applications.General Features V =900V, R

 0.1. Size:227K  toshiba
 2sk3878.pdf pdf_icon

K3878

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 0.2. Size:216K  inchange semiconductor
 2sk3878.pdf pdf_icon

K3878

isc N-Channel Mosfet Transistor 2SK3878FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a

Datasheet: MPT045N08P , MPT045N08S , MPT65N08 , MPT65N08S , P80NF70 , AO3400S , AO3401S , IRLR024NTR , NCEP15T14 , MD20N60 , MD20N65 , MD23N50 , MD33N25 , MD40N25 , MD9N90 , MDP18N20 , MDP2N60 .

Keywords - K3878 MOSFET datasheet

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