AP50N03S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP50N03S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.6 nS

Cossⓘ - Capacitancia de salida: 267 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: SOP8

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AP50N03S datasheet

 ..1. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03S

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

 7.1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03S

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R

 7.2. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03S

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R

 7.3. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03S

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

MOSTRAR MÁS

Otros transistores... MP9N20, MPF12N65, MPF13N50, MPF18N20, MPF20N50, AP15N04S, AP3416AI, AP4N06SI, 10N65, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D