AP50N03S Todos los transistores

 

AP50N03S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50N03S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 267 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET AP50N03S

 

AP50N03S Datasheet (PDF)

 ..1. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03S

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

 7.1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03S

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R

 7.2. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03S

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R

 7.3. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03S

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

MOSTRAR MÁS

Otros transistores... MP9N20 , MPF12N65 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , 10N65 , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D .

History: 2SK1527

 

 
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