All MOSFET. AP50N03S Datasheet

 

AP50N03S Datasheet and Replacement


   Type Designator: AP50N03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 267 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOP8
 

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AP50N03S Datasheet (PDF)

 ..1. Size:1736K  cn apm
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AP50N03S

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR

 8.1. Size:1600K  cn apm
 ap50n06y.pdf pdf_icon

AP50N03S

AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS DR

Datasheet: MP9N20 , MPF12N65 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , 75N75 , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D .

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