AP50N03S - аналоги и даташиты транзистора

 

AP50N03S - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP50N03S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8.6 ns
   Cossⓘ - Выходная емкость: 267 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для AP50N03S

 

AP50N03S Datasheet (PDF)

 ..1. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03S

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

 7.1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03S

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R

 7.2. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03S

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R

 7.3. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03S

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... MP9N20 , MPF12N65 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , 10N65 , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D .

 

 
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