AP50N03S datasheet, аналоги, основные параметры

Наименование производителя: AP50N03S  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.6 ns

Cossⓘ - Выходная емкость: 267 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm

Тип корпуса: SOP8

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Аналог (замена) для AP50N03S

- подборⓘ MOSFET транзистора по параметрам

 

AP50N03S даташит

 ..1. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03S

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

 7.1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03S

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R

 7.2. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03S

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R

 7.3. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03S

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MP9N20, MPF12N65, MPF13N50, MPF18N20, MPF20N50, AP15N04S, AP3416AI, AP4N06SI, 10N65, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D